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TPS3106E16DBVTG4

Texas Instruments

TPS3106E16DBVTG4 by Texas Instruments

TPS3106E16DBVTG4 by Texas Instruments is a Power Management IC with Vsup of 1.6V, Isup of 0.022mA, and Vmax of 3.6V. It is used in industrial applications for power supply support circuits due to its compact size, low profile design, and wide operating temperature range from -40 to 85°C.

Median Price

$1.760

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 54 parts In-Stock

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$1.760

10k+ parts

$1.620

54

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$1.620

Distributors (In-Stock)

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Vyrian

USA . 7,878 parts In-Stock

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Digiode

USA . 356 parts In-Stock

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Euro-Tech

UK . 325 parts In-Stock

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Ampacity Inc.

Singapore . 54 parts In-Stock

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$1.500

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Parana Technologies

USA . 1,871 parts In-Stock

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$5.313

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$5.955

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$5.313

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DigiPath Technology Company

USA . 2,167 parts In-Stock

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$5.851

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ChromeModa Solutions

Germany . 5,180 parts In-Stock

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$5.970

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$4.895

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IDEA Electronic Components Group

UK . 455 parts In-Stock

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$5.970

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$5.373

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QUARKTWIN TECHNOLOGY LTD

USA . 25,214 parts In-Stock

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Microchip USA

USA . 4,663 parts In-Stock

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Corphita

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Overview

Discover the TPS3106E16DBVTG4 by Texas Instruments, a top-quality Power Management IC that offers unparalleled performance and reliability. Manufactured by the renowned Texas Instruments, this IC is designed to meet the highest standards in power management technology. Perfect for a wide range of applications, this small outline, low profile IC provides efficient power supply support with a nominal threshold voltage of +1.521V. With a temperature grade of industrial and a maximum operating temperature of 85°C, the TPS3106E16DBVTG4 ensures optimal performance even in the most demanding environments. Trust Texas Instruments for top-of-the-line power management solutions that deliver superior value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the power management IC, ensuring long-lasting performance.

Nominal Supply Voltage (Vsup): 1.6 V

Suitable for a wide range of applications that require a stable supply voltage of 1.6V.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold environments, making it suitable for various industrial applications.

Technology: CMOS

Utilizes CMOS technology for efficient power management and low power consumption, making it energy-efficient.

Maximum Supply Voltage (Vsup): 3.6 V

Capable of handling a maximum supply voltage of 3.6V, providing flexibility in different voltage input scenarios.

Technical Specifications

Power Management ICs TPS3106E16DBVTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 1.521V; POWER ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.4/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.022 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage (Vsup):

1.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.521V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.6 mm

Trade Compliance

TPS3106E16DBVTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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