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TPS2828DBVTG4

Texas Instruments

TPS2828DBVTG4 by Texas Instruments

TPS2828DBVTG4 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 14V and power supplies up to 10V. With a small outline package style, it operates in automotive-grade temperatures from -40°C to 125°C. Ideal for applications requiring inverted output polarity and high side drivers with fast turn-on/off times of 0.05us.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,209 parts In-Stock

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Digiode

USA . 708 parts In-Stock

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708

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Parana Technologies

USA . 1,331 parts In-Stock

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$6.588

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$7.328

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$6.588

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$7.328

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DigiPath Technology Company

USA . 992 parts In-Stock

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$7.254

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$6.674

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992

$7.254

$6.674

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IDEA Electronic Components Group

UK . 1,998 parts In-Stock

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$7.402

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$6.662

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$7.402

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ChromeModa Solutions

Germany . 547 parts In-Stock

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$7.402

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$6.070

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547

$7.402

$6.070

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AZTECH Wire

Italy . 439 parts In-Stock

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$17.671

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One Stop Electronics

USA . 1,563 parts In-Stock

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$39.500

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$39.500

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Component Stockers USA

USA . 287 parts In-Stock

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$99.990

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Corphita

USA . 2,334 parts In-Stock

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Microchip USA

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Overview

Experience high-quality performance with the TPS2828DBVTG4 MOSFET Gate Driver by Texas Instruments. Designed with precision and reliability in mind, this small-outline driver offers a wide range of applications in various industries. With its inverted output polarity and totem-pole configuration, it delivers efficient power management while ensuring seamless operation. Trust in Texas Instruments' expertise in semiconductor technology to provide you with a superior product that guarantees optimal performance and durability. Upgrade your systems today with the TPS2828DBVTG4 for unparalleled value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material makes the product lightweight and durable, ideal for various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration onto circuit boards.

Maximum Supply Voltage: 14 V

Can handle high supply voltages, providing versatility in different power supply setups.

Output Characteristics: TOTEM-POLE

Totem-pole output configuration ensures reliable and efficient switching of MOSFETs.

Maximum Operating Temperature: 125 °C

High operating temperature range makes the product suitable for demanding environments.

Technology: BICMOS

BICMOS technology combines the benefits of bipolar and CMOS technologies, offering high performance and efficiency.

Technical Specifications

MOSFET Gate Drivers TPS2828DBVTG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

2 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.015 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

1.65 mm

Trade Compliance

TPS2828DBVTG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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