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TPS28226DRBR

Texas Instruments

TPS28226DRBR by Texas Instruments

TPS28226DRBR by Texas Instruments is a MOSFET Gate Driver with 2 channels, 6A output current limit, and 8V max supply voltage. Ideal for automotive applications due to its small outline package style and high side driver feature. Operates in temperatures ranging from -40°C to 125°C, making it suitable for various automotive electronic systems.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 8,431 parts In-Stock

1+ parts

$1.080

100+ parts

$0.892

1k+ parts

$0.482

10k+ parts

-

8,431

$1.080

$0.892

$0.482

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,824 parts In-Stock

1+ parts

$1.026

100+ parts

-

1k+ parts

-

10k+ parts

-

3,824

$1.026

-

-

-

Inventory MP

USA . 67,629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

67,629

-

-

-

-

Bristol Electronics

USA . 67,629 parts In-Stock

1+ parts

-

100+ parts

-

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67,629

-

-

-

-

Vyrian

USA . 4,632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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4,632

-

-

-

-

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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550

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,315 parts In-Stock

1+ parts

$0.920

100+ parts

-

1k+ parts

-

10k+ parts

-

8,315

$0.920

-

-

-

Corphita

USA . 3,030 parts In-Stock

1+ parts

$0.972

100+ parts

-

1k+ parts

-

10k+ parts

-

3,030

$0.972

-

-

-

Microchip USA

USA . 4,363 parts In-Stock

1+ parts

$4.518

100+ parts

-

1k+ parts

-

10k+ parts

-

4,363

$4.518

-

-

-

Parana Technologies

USA . 258 parts In-Stock

1+ parts

$6.680

100+ parts

-

1k+ parts

$7.380

10k+ parts

-

258

$6.680

-

$7.380

-

DigiPath Technology Company

USA . 2,133 parts In-Stock

1+ parts

$7.356

100+ parts

$6.767

1k+ parts

-

10k+ parts

-

2,133

$7.356

$6.767

-

-

Component Stockers USA

USA . 13,922 parts In-Stock

1+ parts

$7.430

100+ parts

-

1k+ parts

-

10k+ parts

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13,922

$7.430

-

-

-

IDEA Electronic Components Group

UK . 1,107 parts In-Stock

1+ parts

$7.506

100+ parts

-

1k+ parts

$6.755

10k+ parts

-

1,107

$7.506

-

$6.755

-

ChromeModa Solutions

Germany . 1 parts In-Stock

1+ parts

$7.506

100+ parts

$6.155

1k+ parts

-

10k+ parts

-

1

$7.506

$6.155

-

-

AZTECH Wire

Italy . 374 parts In-Stock

1+ parts

$9.210

100+ parts

-

1k+ parts

-

10k+ parts

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374

$9.210

-

-

-

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$14.336

100+ parts

$13.046

1k+ parts

$11.756

10k+ parts

-

350

$14.336

$13.046

$11.756

-

A-Z Elektronik GmbH

Germany . 11,291 parts In-Stock

1+ parts

-

100+ parts

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11,291

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-

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Perfect Parts

USA . 6,384 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,384

-

-

-

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Kepictronics

USA . 2,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,990

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

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-

-

Overview

Elevate your power management solutions with the TPS28226DRBR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality MOSFET Gate Drivers that are essential for a wide range of applications. From automotive to industrial settings, this product offers unparalleled reliability and performance. With a compact package design and high output current capability, customers can trust in the value and benefits that this gate driver provides. Upgrade your projects today with the TPS28226DRBR and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 8 V

Can handle higher voltage levels, providing flexibility in different circuit designs.

Power Supplies (V): 7.2

Offers a stable power supply for optimal performance of the MOSFET gate drivers.

Maximum Output Current: 6 A

Capable of delivering high current for driving MOSFETs, suitable for various applications.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards, ensuring reliability in harsh environments.

No. of Channels: 2

Supports multiple channels for driving MOSFETs, providing versatility in circuit design.

Technical Specifications

MOSFET Gate Drivers TPS28226DRBR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

6 A

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

7.2

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

8 V

Minimum Supply Voltage:

6.8 V

Nominal Supply Voltage:

7.2 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

TPS28226DRBR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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