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TPS2330IDRG4

Texas Instruments

TPS2330IDRG4 by Texas Instruments

TPS2330IDRG4 by Texas Instruments is a Power Management IC with 14 terminals, supporting supply voltages of 3.3/5,3/13V. It has a max output current of 500A and operates in industrial temperature range (-40 to 85°C). Ideal for power supply support circuits in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,575 parts In-Stock

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Sea View Technologies

USA . 5,938 parts In-Stock

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Bristol Electronics

USA . 3,438 parts In-Stock

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Digiode

USA . 1,534 parts In-Stock

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One Stop Electronics

USA . 1,586 parts In-Stock

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$5.500

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AZTECH Wire

Italy . 499 parts In-Stock

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$6.038

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Parana Technologies

USA . 1,951 parts In-Stock

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$9.103

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$9.756

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ChromeModa Solutions

Germany . 1,484 parts In-Stock

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$10.228

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$8.387

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IDEA Electronic Components Group

UK . 934 parts In-Stock

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$10.228

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$9.717

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$9.205

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934

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Component Stockers USA

USA . 762 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 19,169 parts In-Stock

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Microchip USA

USA . 3,875 parts In-Stock

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Corphita

USA . 3,434 parts In-Stock

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Metaverse IC Inc.

Canada . 2,800 parts In-Stock

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DigiPath Technology Company

USA . 801 parts In-Stock

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$9.222

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Overview

Power up your devices with the TPS2330IDRG4 from Texas Instruments, a leading manufacturer in Power Management ICs. This high-quality product offers exceptional performance and reliability, making it perfect for a wide range of applications. With a small outline package design and dual terminal position, the TPS2330IDRG4 is versatile and easy to integrate into your projects. Experience the benefits of adjustable threshold, nickel/palladium/gold terminal finish, and a nominal supply voltage of 4.5V. Trust Texas Instruments for superior quality and efficiency in power management solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the IC, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and space.

Nominal Supply Voltage (Vsup): 4.5 V

Stable supply voltage of 4.5V ensures reliable performance of the IC in different operating conditions.

No. of Terminals: 14

Having 14 terminals provides flexibility in connecting the IC to other components, enabling versatile functionality.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures the IC can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40°C allows the IC to operate efficiently in cold environments.

Maximum Output Current: 500 A

High maximum output current capacity of 500A makes the IC suitable for power management applications requiring high power handling.

Adjustable Threshold: YES

Adjustable threshold feature allows customization and fine-tuning of the IC's performance to meet specific requirements.

Technical Specifications

Power Management ICs TPS2330IDRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

REQUIRES 3V TO 5.5V SUPPLY FOR CHANNEL 2

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

500 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5,3/13

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

1 mA

Maximum Supply Voltage (Vsup):

13 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.9 mm

Trade Compliance

TPS2330IDRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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