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TPS2010DRG4

Texas Instruments

TPS2010DRG4 by Texas Instruments

TPS2010DRG4 by Texas Instruments is a Power Management IC with 8 terminals, operating voltage range of 2.7V to 5.5V, and industrial temperature grade. It is designed for power supply support circuits in applications requiring a small outline package with surface mount capability. With a max seated height of 1.75mm and nickel palladium gold terminal finish, it offers reliable performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,253 parts In-Stock

1+ parts

-

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7,253

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Digiode

USA . 769 parts In-Stock

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769

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Sensible Micro Corp

USA . 253 parts In-Stock

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253

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 534 parts In-Stock

1+ parts

$4.048

100+ parts

-

1k+ parts

$4.510

10k+ parts

-

534

$4.048

-

$4.510

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DigiPath Technology Company

USA . 1,421 parts In-Stock

1+ parts

$4.457

100+ parts

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1,421

$4.457

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ChromeModa Solutions

Germany . 2,128 parts In-Stock

1+ parts

$4.548

100+ parts

$3.729

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2,128

$4.548

$3.729

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IDEA Electronic Components Group

UK . 1,233 parts In-Stock

1+ parts

$4.548

100+ parts

-

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$4.093

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1,233

$4.548

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$4.093

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One Stop Electronics

USA . 598 parts In-Stock

1+ parts

$5.500

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598

$5.500

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AZTECH Wire

Italy . 344 parts In-Stock

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$11.635

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344

$11.635

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$26.731

100+ parts

$24.325

1k+ parts

$21.919

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5,000

$26.731

$24.325

$21.919

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Microchip USA

USA . 1,380 parts In-Stock

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1,380

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Corphita

USA . 903 parts In-Stock

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903

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Overview

Experience the superior quality and reliability of Texas Instruments with the TPS2010DRG4 Power Management IC. This versatile component is perfect for a wide range of applications, offering efficient power supply support in a compact package. With a nominal supply voltage of 3V and a maximum operating temperature of 85°C, this IC delivers consistent performance in industrial settings. Trust Texas Instruments for innovative solutions that provide value and peace of mind to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for various applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and cost.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage for efficient power management operations.

No. of Terminals: 8

Provides enough connectivity options for different components in the circuit.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliable performance in harsh environments.

Minimum Operating Temperature: -40 °C

Suitable for use in cold conditions without compromising functionality.

Terminal Finish: NICKEL PALLADIUM GOLD

Enhances durability and conductivity, prolonging the product's lifespan.

Width (mm): 3.9 mm

Compact size saves space on the PCB and allows for efficient PCB design.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Specifically designed to support power supply functions, ensuring reliable and stable power delivery.

Temperature Grade: INDUSTRIAL

Designed to operate in industrial environments, making it suitable for a wide range of applications.

Technical Specifications

Power Management ICs TPS2010DRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Current (Isup):

.1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

TPS2010DRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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