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TPA3120D2PWPR

Texas Instruments

TPA3120D2PWPR by Texas Instruments

TPA3120D2PWPR by Texas Instruments is a 24V audio amplifier IC with 20W output power and 36dB gain. It features a small outline package, dual terminals, and operates in industrial temperature range. Ideal for audio applications requiring high power efficiency and compact design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,923 parts In-Stock

1+ parts

-

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1,923

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Digiode

USA . 1,616 parts In-Stock

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1,616

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 780 parts In-Stock

1+ parts

$2.800

100+ parts

-

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780

$2.800

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Parana Technologies

USA . 664 parts In-Stock

1+ parts

$3.305

100+ parts

-

1k+ parts

$3.828

10k+ parts

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664

$3.305

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$3.828

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ChromeModa Solutions

Germany . 4,050 parts In-Stock

1+ parts

$3.714

100+ parts

$3.045

1k+ parts

-

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4,050

$3.714

$3.045

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IDEA Electronic Components Group

UK . 1,947 parts In-Stock

1+ parts

$3.714

100+ parts

-

1k+ parts

$3.343

10k+ parts

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1,947

$3.714

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$3.343

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AZTECH Wire

Italy . 322 parts In-Stock

1+ parts

$8.668

100+ parts

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322

$8.668

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Corphita

USA . 4,138 parts In-Stock

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4,138

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DigiPath Technology Company

USA . 1,773 parts In-Stock

1+ parts

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100+ parts

$3.349

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1,773

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$3.349

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Overview

Experience top-notch audio quality with the TPA3120D2PWPR by Texas Instruments, a leading manufacturer in the industry. This audio amplifier is perfect for a wide range of applications in the audio and video realm, offering customers unparalleled value and benefits. With a powerful output of 20W and dual channels, this product ensures crystal-clear sound and seamless performance. Elevate your audio experience with the TPA3120D2PWPR and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components of the amplifier.

Surface Mount: YES

The surface-mount design allows for easy installation onto circuit boards, making it suitable for compact electronic devices.

General IC Type: AUDIO AMPLIFIER

Being designed specifically as an audio amplifier ensures optimal performance for audio applications.

Power Supplies (V): 24

With a power supply of 24V, this amplifier can deliver sufficient power to drive speakers or headphones effectively.

Nominal Output Power: 20W

The 20W output power enables the amplifier to deliver robust audio output for a variety of audio applications.

No. of Channels: 2

Having 2 channels allows for stereo sound reproduction, enhancing the audio experience.

Technology: CMOS

The CMOS technology used in the amplifier helps in reducing power consumption and improving efficiency.

Nominal Bandwidth: 0.022kHz

The 0.022kHz nominal bandwidth ensures accurate reproduction of audio frequencies without distortion.

Gain: 36dB

The 36dB gain amplifies the input audio signal to produce a stronger output signal, improving the overall audio quality.

Technical Specifications

Audio & Video Amplifiers TPA3120D2PWPR attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

.022 kHz

General IC Type:

Gain:

36 dB

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

7.8 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

20 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

24

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

37 mA

Maximum Supply Voltage (Vsup):

30 V

Minimum Supply Voltage (Vsup):

10 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

TPA3120D2PWPR General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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