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TLV341IDBVTE4

Texas Instruments

TLV341IDBVTE4 by Texas Instruments

TLV341IDBVTE4 by Texas Instruments is a CMOS Operational Amplifier with 4500uV Max Input Offset Voltage, 85dB Nominal CMRR, and 2200kHz Unity Gain Bandwidth. Ideal for automotive applications due to its low-bias, micropower design and operating temperature range of -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,128 parts In-Stock

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7,128

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Digiode

USA . 310 parts In-Stock

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310

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Distributors (Availability)

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Parana Technologies

USA . 1,012 parts In-Stock

1+ parts

$2.261

100+ parts

-

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$2.761

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1,012

$2.261

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$2.761

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ChromeModa Solutions

Germany . 6,553 parts In-Stock

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$2.540

100+ parts

$2.083

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6,553

$2.540

$2.083

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IDEA Electronic Components Group

UK . 1,123 parts In-Stock

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$2.540

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$2.286

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1,123

$2.540

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$2.286

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One Stop Electronics

USA . 153 parts In-Stock

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$5.410

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153

$5.410

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AZTECH Wire

Italy . 830 parts In-Stock

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$11.863

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830

$11.863

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Corphita

USA . 3,958 parts In-Stock

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DigiPath Technology Company

USA . 1,833 parts In-Stock

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$2.290

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$2.290

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Microchip USA

USA . 163 parts In-Stock

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Overview

Enhance your electronic designs with the TLV341IDBVTE4 by Texas Instruments, a high-quality operational amplifier that delivers precision and reliability. Manufactured by industry leader Texas Instruments, this op amp is perfect for a wide range of applications, providing exceptional performance and efficiency. With a compact package design and low power consumption, this amplifier offers value and convenience for your projects. Trust in Texas Instruments for top-notch technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the operational amplifier.

Maximum Input Offset Voltage: 4500 uV

The low input offset voltage ensures accurate amplification of signals.

Maximum Average Bias Current (IIB): 0.003 uA

The low bias current helps in reducing power consumption and improving overall efficiency.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 85 dB

This high rejection ratio helps in minimizing noise and interference in the amplified signal.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage requirement makes it suitable for low power applications.

No. of Terminals: 6

Having a small number of terminals simplifies the circuit design and integration process.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this operational amplifier suitable for various environments.

Nominal Unity Gain Bandwidth: 2200 kHz

The high bandwidth allows for accurate amplification of high-frequency signals.

Technology: CMOS

CMOS technology provides low power consumption and high input impedance for improved performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLV341IDBVTE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

1.8/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

4500 uV

Minimum Voltage Gain:

560

Nominal Slew Rate:

0.9 V/us

Peak Bias Current:

3 nA

Maximum Bias Current (IIB) @25 °C:

100 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

200 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

TLV341IDBVTE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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