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TLV2772QDG4

Texas Instruments

TLV2772QDG4 by Texas Instruments

TLV2772QDG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00006 uA @25C. With a unity gain bandwidth of 4800 kHz, it's ideal for automotive applications due to its small outline package and wide operating temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,807 parts In-Stock

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Digiode

USA . 4,826 parts In-Stock

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Parana Technologies

USA . 751 parts In-Stock

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$4.476

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$4.911

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DigiPath Technology Company

USA . 1,598 parts In-Stock

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$4.928

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ChromeModa Solutions

Germany . 1,819 parts In-Stock

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$5.029

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$4.124

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IDEA Electronic Components Group

UK . 1,759 parts In-Stock

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$4.526

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One Stop Electronics

USA . 1,404 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 777 parts In-Stock

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Component Stockers USA

USA . 646 parts In-Stock

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$99.990

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Microchip USA

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Corphita

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Overview

Enhance your electronic designs with the Texas Instruments TLV2772QDG4 Operational Amplifiers. Crafted with precision by a trusted industry leader, these op amps offer unparalleled performance and reliability. Ideal for a wide range of applications, these dual-function amplifiers deliver high-quality signal processing while consuming minimal power. With features like low bias current and high common mode rejection ratio, the TLV2772QDG4 ensures optimal functionality in automotive-grade environments. Invest in this cutting-edge technology to elevate your projects and experience seamless operation like never before. Trust Texas Instruments for superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 2700 uV

The low maximum input offset voltage of 2700 uV ensures accurate and precise amplification of input signals.

Maximum Average Bias Current (IIB): 0.00035 uA

The low maximum average bias current of 0.00035 uA helps in reducing power consumption and enhancing efficiency.

Surface Mount: YES

Being surface mountable, the op amp is easy to install on PCBs, saving space and facilitating automated assembly processes.

Nominal Common Mode Reject Ratio: 82 dB

With a high nominal common mode reject ratio of 82 dB, the op amp effectively suppresses common-mode noise for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 2.7

The nominal supply voltage of 2.7V makes the op amp suitable for low-power applications while providing sufficient voltage for operation.

Minimum Slew Rate: 4.7 V/us

The minimum slew rate of 4.7 V/us ensures fast response time and efficient signal amplification.

Technology: CMOS

Utilizing CMOS technology, the op amp offers low power consumption, high input impedance, and fast switching speeds.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for high gain, high input impedance, and accurate signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2772QDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

2700 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2772QDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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