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TLV2772MDRG4

Texas Instruments

TLV2772MDRG4 by Texas Instruments

TLV2772MDRG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00006 uA @25C. With a unity gain bandwidth of 4800 kHz, it's ideal for military applications requiring high common mode rejection ratio and low power consumption. The small outline package makes it suitable for compact designs in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,006 parts In-Stock

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Digiode

USA . 2,079 parts In-Stock

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Parana Technologies

USA . 682 parts In-Stock

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$3.697

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$4.199

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682

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DigiPath Technology Company

USA . 1,393 parts In-Stock

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$4.071

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$3.745

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IDEA Electronic Components Group

UK . 1,019 parts In-Stock

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$4.154

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$3.739

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ChromeModa Solutions

Germany . 107 parts In-Stock

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$4.154

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$3.406

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One Stop Electronics

USA . 891 parts In-Stock

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$4.410

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AZTECH Wire

Italy . 267 parts In-Stock

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Microchip USA

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Corphita

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Overview

Discover the unmatched precision and reliability of the TLV2772MDRG4 operational amplifiers by Texas Instruments. With a MIL-STD-883 screening level, this high-quality product offers exceptional performance in various applications. From signal conditioning to sensor amplification, the TLV2772MDRG4 provides customers with superior accuracy and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the TLV2772MDRG4 and experience unparalleled value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable and rugged applications.

Maximum Input Offset Voltage: 2700 uV

Low input offset voltage ensures high precision and accuracy in signal processing.

Maximum Average Bias Current (IIB): 0.00035 uA

Low bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount design allows for easy PCB integration and saves space in compact designs.

Nominal Common Mode Reject Ratio: 82 dB

High common mode rejection ratio ensures effective rejection of unwanted common mode signals, enhancing signal integrity.

Nominal Supply Voltage / Vsup (V): 2.7

Operating at a nominal supply voltage of 2.7V enables compatibility with low voltage systems, making it suitable for battery-powered devices.

Minimum Slew Rate: 4.7 V/us

Fast slew rate allows for rapid response to input signal changes, crucial for applications requiring high-speed operation.

Maximum Operating Temperature: 125 °C

Wide operating temperature range of up to 125°C ensures reliability in various environmental conditions.

Technology: CMOS

The CMOS technology offers low power consumption and high input impedance, making it suitable for low-power and precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in a wide range of applications including amplification, filtering, and signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2772MDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

2700 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2772MDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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