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TLV2770IDG4

Texas Instruments

TLV2770IDG4 by Texas Instruments

TLV2770IDG4 by Texas Instruments is an Operational Amplifier with 2700uV Max Input Offset Voltage, 82dB CMRR, and 4.7V/us Min Slew Rate. Ideal for automotive applications due to its low-bias current of 0.00006uA @25C and compact SMALL OUTLINE package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,327 parts In-Stock

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Digiode

USA . 3,422 parts In-Stock

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Parana Technologies

USA . 1,372 parts In-Stock

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$3.321

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$3.844

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$3.321

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$3.844

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One Stop Electronics

USA . 1,458 parts In-Stock

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$3.410

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$3.410

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ChromeModa Solutions

Germany . 6,474 parts In-Stock

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$3.732

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$3.060

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$3.732

$3.060

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IDEA Electronic Components Group

UK . 911 parts In-Stock

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$3.732

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$3.359

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911

$3.732

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$3.359

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AZTECH Wire

Italy . 730 parts In-Stock

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$12.625

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730

$12.625

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Corphita

USA . 4,056 parts In-Stock

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DigiPath Technology Company

USA . 1,995 parts In-Stock

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$3.365

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Microchip USA

USA . 408 parts In-Stock

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Overview

Experience the superior performance of the TLV2770IDG4 operational amplifier by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliability and precision in every component they manufacture. The TLV2770IDG4 is perfect for a wide range of applications, offering unmatched value with its low bias current, high slew rate, and wide supply voltage range. Elevate your projects with this versatile operational amplifier that provides exceptional performance and efficiency, setting a new standard in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 2700 uV

The low input offset voltage ensures accurate and precise output signal processing.

Maximum Average Bias Current (IIB): 0.00035 uA

The low bias current helps in reducing power consumption and improving overall efficiency of the operational amplifier.

Nominal Common Mode Reject Ratio: 82 dB

High common mode rejection ratio enables the operational amplifier to effectively reject noise and interference from the input signal.

Minimum Slew Rate: 4.7 V/us

A fast slew rate allows for quick response to input signal changes, making this operational amplifier suitable for applications requiring rapid signal processing.

Nominal Unity Gain Bandwidth: 4800 kHz

The high unity gain bandwidth indicates that the operational amplifier can handle high-frequency signals with minimal distortion.

Technology: CMOS

The CMOS technology used in this operational amplifier offers low power consumption and high input impedance, making it ideal for battery-powered applications.

Maximum Supply Current: 2 mA

The low supply current requirement helps in conserving energy and extending the operational amplifier's operating life.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2770IDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

2700 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2770IDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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