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TLV2474AIDRG4

Texas Instruments

TLV2474AIDRG4 by Texas Instruments

TLV2474AIDRG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, low bias current of 0.00005 uA, and unity gain bandwidth of 2800 kHz. Ideal for automotive applications due to its micropower design, high common mode rejection ratio, and wide operating temperature range from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,201 parts In-Stock

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4,201

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Digiode

USA . 3,907 parts In-Stock

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3,907

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Distributors (Availability)

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One Stop Electronics

USA . 979 parts In-Stock

1+ parts

$2.410

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979

$2.410

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Parana Technologies

USA . 2,280 parts In-Stock

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$3.030

100+ parts

-

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$3.540

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2,280

$3.030

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$3.540

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ChromeModa Solutions

Germany . 5,462 parts In-Stock

1+ parts

$3.404

100+ parts

$2.791

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5,462

$3.404

$2.791

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IDEA Electronic Components Group

UK . 747 parts In-Stock

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$3.404

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$3.064

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747

$3.404

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$3.064

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AZTECH Wire

Italy . 890 parts In-Stock

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$17.625

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890

$17.625

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Microchip USA

USA . 2,371 parts In-Stock

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2,371

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Corphita

USA . 891 parts In-Stock

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DigiPath Technology Company

USA . 377 parts In-Stock

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$3.069

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377

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$3.069

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Overview

Experience the superior quality and precision of Texas Instruments with the TLV2474AIDRG4 Operational Amplifier. This compact, high-performance device is perfect for a wide range of applications, offering unparalleled reliability and efficiency. With its micropower technology and low-bias design, this amplifier provides customers with exceptional value and benefits. Whether you're in the automotive industry or working on cutting-edge electronics, the TLV2474AIDRG4 delivers the performance you need to succeed. Trust in Texas Instruments for the best in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a cost-effective and lightweight option for housing the operational amplifier.

Maximum Input Offset Voltage: 1800 uV

Ensures minimal voltage discrepancies, resulting in accurate signal amplification.

Surface Mount: YES

Facilitates easy and efficient PCB assembly and integration.

Nominal Common Mode Reject Ratio: 78 dB

Ensures effective rejection of common-mode signals and interference, leading to cleaner output signals.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently within a common supply voltage range, making it versatile for various applications.

Micropower: YES

Delivers low power consumption for energy-efficient performance.

Architecture: VOLTAGE-FEEDBACK

Provides stability and precision in voltage amplification applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2474AIDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Minimum Common Mode Rejection Ratio (CMRR ):

64 dB

Input Offset Voltage Limit:

1800 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.6 V/us

Nominal Slew Rate:

1.4 V/us

Maximum Input Offset Current (IIO):

50 pA

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2474AIDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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