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TLV2472IDGNRG4

Texas Instruments

TLV2472IDGNRG4 by Texas Instruments

TLV2472IDGNRG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00005 uA and high common mode rejection ratio of 78 dB. Ideal for automotive applications due to its small outline package and wide temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,860 parts In-Stock

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Vyrian

USA . 3,405 parts In-Stock

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Nova Conductors

Japan . 18 parts In-Stock

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Parana Technologies

USA . 1,218 parts In-Stock

1+ parts

$3.079

100+ parts

$285.969

1k+ parts

$2.771

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1,218

$3.079

$285.969

$2.771

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DigiPath Technology Company

USA . 1,647 parts In-Stock

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$3.391

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One Stop Electronics

USA . 407 parts In-Stock

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$3.410

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$3.410

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ChromeModa Solutions

Germany . 4,446 parts In-Stock

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$3.460

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$2.837

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$3.460

$2.837

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IDEA Electronic Components Group

UK . 1,121 parts In-Stock

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$3.460

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$3.114

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$3.460

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Semicontronic

India . 1,053 parts In-Stock

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$4.410

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$4.300

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$4.278

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Corohmni

South Africa . 836 parts In-Stock

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$5.529

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Ampacity Inc.

Singapore . 717 parts In-Stock

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$6.410

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$6.410

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AZTECH Wire

Italy . 398 parts In-Stock

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$8.140

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A-Z Elektronik GmbH

Germany . 8,710 parts In-Stock

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Continental Prestige Electronics

USA . 4,215 parts In-Stock

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Argo Parts USA

USA . 3,981 parts In-Stock

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Corphita

USA . 2,548 parts In-Stock

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Microchip USA

USA . 1,296 parts In-Stock

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Bastille Electronics

Australia . 60 parts In-Stock

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Overview

Enhance your electronic designs with the Texas Instruments TLV2472IDGNRG4 operational amplifiers. Known for their high-quality manufacturing, Texas Instruments delivers top-notch products that are reliable and efficient. These operational amplifiers are versatile, offering a wide range of applications in various industries. With low bias current and high voltage gain, the TLV2472IDGNRG4 provides exceptional performance, making it a valuable choice for customers looking for precision and stability in their circuits. Upgrade your projects with this cutting-edge amplifier from Texas Instruments and experience unparalleled results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components.

Maximum Input Offset Voltage: 2400 uV

Low input offset voltage for accurate amplification.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Common Mode Reject Ratio: 78 dB

High common mode rejection ratio reduces interference for cleaner output signals.

Architecture: VOLTAGE-FEEDBACK

Provides stability and high performance in voltage amplification applications.

Technology: CMOS

Low power consumption and high input impedance for efficient signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2472IDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Minimum Common Mode Rejection Ratio (CMRR ):

64 dB

Input Offset Voltage Limit:

2400 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.6 V/us

Nominal Slew Rate:

1.4 V/us

Maximum Input Offset Current (IIO):

50 pA

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.8 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV2472IDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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