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TLV2462AQDR

Texas Instruments

TLV2462AQDR by Texas Instruments

TLV2462AQDR by Texas Instruments is a CMOS Operational Amplifier with 2 functions, VOLTAGE-FEEDBACK architecture, and 5200 kHz Unity Gain Bandwidth. It has a Max Input Offset Voltage of 1700 uV and operates at temperatures from -40 to 125 °C. Ideal for automotive applications due to its low bias current and high common mode rejection ratio.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,309 parts In-Stock

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Digiode

USA . 2,659 parts In-Stock

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One Stop Electronics

USA . 1,299 parts In-Stock

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$4.410

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$4.410

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Parana Technologies

USA . 1,619 parts In-Stock

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$4.427

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$411.101

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$3.984

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$4.427

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DigiPath Technology Company

USA . 774 parts In-Stock

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$4.875

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ChromeModa Solutions

Germany . 2,159 parts In-Stock

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$4.974

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$4.079

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IDEA Electronic Components Group

UK . 7 parts In-Stock

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$4.974

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$4.477

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7

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AZTECH Wire

Italy . 614 parts In-Stock

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$9.118

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QUARKTWIN TECHNOLOGY LTD

USA . 26,597 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,968 parts In-Stock

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Corphita

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Microchip USA

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Overview

Discover the unparalleled quality and precision of the TLV2462AQDR operational amplifiers by Texas Instruments. This innovative product offers exceptional performance in a compact package, making it ideal for a wide range of applications. With its advanced technology and reliable design, customers can trust that they are getting the best value for their money. Elevate your projects with the TLV2462AQDR and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external elements, making this product suitable for various environmental conditions.

Maximum Input Offset Voltage: 1700 uV

Low input offset voltage ensures accurate signal processing and reduced errors in the output, making it a reliable choice for precision applications.

Maximum Average Bias Current (IIB): 0.075 uA

Low bias current helps in minimizing power consumption and maintaining signal integrity, which is essential for low-power applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference, ensuring clean and accurate signal reproduction.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage ensures stable operation and performance consistency, making it suitable for a wide range of applications.

Frequency Compensation: YES

Frequency compensation feature allows for stability and control over the amplifier's response, ensuring reliable and consistent output.

Nominal Unity Gain Bandwidth: 5200 kHz

High unity gain bandwidth enables this operational amplifier to process signals efficiently across a wide range of frequencies, making it versatile for different applications.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and fast response times, making this amplifier suitable for energy-efficient and high-speed applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2462AQDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1700 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2462AQDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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