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TLV2460QDR

Texas Instruments

TLV2460QDR by Texas Instruments

TLV2460QDR by Texas Instruments is an Operational Amplifier with 2200uV Max Input Offset Voltage, 80dB CMRR, and 5200kHz Unity Gain Bandwidth. Ideal for automotive applications due to its compact size (4.9mm x 3.9mm) and low power consumption (1mA max supply current).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,414 parts In-Stock

1+ parts

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8,414

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Digiode

USA . 4,736 parts In-Stock

1+ parts

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4,736

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 802 parts In-Stock

1+ parts

$4.410

100+ parts

-

1k+ parts

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802

$4.410

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Parana Technologies

USA . 1,850 parts In-Stock

1+ parts

$4.612

100+ parts

-

1k+ parts

$5.081

10k+ parts

-

1,850

$4.612

-

$5.081

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DigiPath Technology Company

USA . 338 parts In-Stock

1+ parts

$5.078

100+ parts

-

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338

$5.078

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ChromeModa Solutions

Germany . 2,127 parts In-Stock

1+ parts

$5.182

100+ parts

$4.249

1k+ parts

-

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2,127

$5.182

$4.249

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IDEA Electronic Components Group

UK . 1,149 parts In-Stock

1+ parts

$5.182

100+ parts

-

1k+ parts

$4.664

10k+ parts

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1,149

$5.182

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$4.664

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AZTECH Wire

Italy . 643 parts In-Stock

1+ parts

$9.381

100+ parts

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643

$9.381

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Corphita

USA . 2,494 parts In-Stock

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2,494

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Microchip USA

USA . 299 parts In-Stock

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299

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Overview

Experience unmatched performance and reliability with the TLV2460QDR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers operational amplifiers of superior quality, making them ideal for a wide range of applications. Whether you're designing automotive systems or consumer electronics, this compact, surface-mount op amp offers precision and efficiency like no other. Trust in Texas Instruments to provide innovative solutions that exceed your expectations. Elevate your projects with the TLV2460QDR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and versatile material for package, suitable for various environments.

Maximum Input Offset Voltage: 2200 uV

Low input offset voltage ensures accurate signal processing.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in rejecting unwanted common mode signals.

Nominal Supply Voltage / Vsup (V): 3

Low power consumption with nominal supply voltage of 3V.

Frequency Compensation: YES

Ability for frequency compensation improves stability and performance of the amplifier.

Nominal Unity Gain Bandwidth: 5200 kHz

High unity gain bandwidth for efficient signal amplification.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing signals accurately.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2460QDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.9 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2460QDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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