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TLV2454IDRG4

Texas Instruments

TLV2454IDRG4 by Texas Instruments

TLV2454IDRG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, offering low bias current of 0.007uA and high common mode rejection ratio of 80dB. Ideal for automotive applications due to its micropower design, small outline package, and wide temperature range from -40 to 125°C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 16,200 parts In-Stock

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Vyrian

USA . 6,792 parts In-Stock

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Digiode

USA . 3,190 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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One Stop Electronics

USA . 1,095 parts In-Stock

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$0.410

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Ampacity Inc.

Singapore . 403 parts In-Stock

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$1.410

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Parana Technologies

USA . 1,831 parts In-Stock

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$2.982

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$3.484

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DigiPath Technology Company

USA . 2,178 parts In-Stock

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$3.283

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ChromeModa Solutions

Germany . 6,512 parts In-Stock

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$3.350

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$2.747

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IDEA Electronic Components Group

UK . 96 parts In-Stock

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$3.350

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$3.015

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AZTECH Wire

Italy . 247 parts In-Stock

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$11.385

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Kepictronics

USA . 7,200 parts In-Stock

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Corphita

USA . 3,319 parts In-Stock

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Microchip USA

USA . 2,004 parts In-Stock

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Aranea Global

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Overview

Enhance your electronic projects with the Texas Instruments TLV2454IDRG4 operational amplifiers! Crafted with precision by a trusted manufacturer, these op amps deliver exceptional performance and reliability. From audio equipment to sensor interfaces, this versatile component offers unmatched value and benefits. Experience superior signal processing and efficient power consumption with the TLV2454IDRG4. Upgrade your designs today and unlock endless possibilities in various applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the op amp, ensuring a longer lifespan and reliable performance.

Maximum Input Offset Voltage: 2000 uV

Low input offset voltage helps in minimizing errors in amplification and signal processing, making this op amp suitable for precision applications.

Maximum Average Bias Current (IIB): 0.007 uA

Low bias current ensures minimal power consumption and stable operation, making it suitable for low-power applications.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly, saving space and reducing production costs.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in minimizing noise and interference, ensuring clean and accurate signal amplification.

Nominal Supply Voltage / Vsup (V): 3

Operates on a low supply voltage, making it suitable for battery-powered and low-voltage applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making this op amp energy-efficient and suitable for high-impedance applications.

Nominal Unity Gain Bandwidth: 200 kHz

High unity gain bandwidth allows for high-frequency operation and fast signal processing, making it suitable for audio and other high-speed applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2454IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

200 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

63095

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.11 V/us

Maximum Input Offset Current (IIO):

450 pA

Peak Bias Current:

7 nA

Maximum Bias Current (IIB) @25 °C:

5 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

168 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2454IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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