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TLV2442CDR

Texas Instruments

TLV2442CDR by Texas Instruments

TLV2442CDR by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low-bias and frequency compensation. It has a max input offset voltage of 2000 uV and operates at a nominal voltage of 3 V. Ideal for applications requiring high common mode rejection ratio and low bias current.

Median Price

$1.225

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,500 parts In-Stock

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$1.225

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$1.225

Distributors (In-Stock)

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Vyrian

USA . 7,029 parts In-Stock

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Digiode

USA . 3,009 parts In-Stock

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Inventory MP

USA . 57 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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Parana Technologies

USA . 146 parts In-Stock

1+ parts

$2.243

100+ parts

$208.278

1k+ parts

$2.019

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-

146

$2.243

$208.278

$2.019

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DigiPath Technology Company

USA . 94 parts In-Stock

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$2.470

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ChromeModa Solutions

Germany . 6,114 parts In-Stock

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$2.520

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$2.066

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$2.520

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IDEA Electronic Components Group

UK . 242 parts In-Stock

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$2.520

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$2.268

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AZTECH Wire

Italy . 859 parts In-Stock

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$5.724

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One Stop Electronics

USA . 520 parts In-Stock

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$7.410

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A-Z Elektronik GmbH

Germany . 7,538 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,528 parts In-Stock

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Corphita

USA . 4,553 parts In-Stock

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Microchip USA

USA . 3,410 parts In-Stock

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Overview

Enhance your circuits with the TLV2442CDR by Texas Instruments, a high-quality operational amplifier designed to deliver precision and reliability. Whether you're working on audio equipment, sensor interfaces, or control systems, this versatile component offers unmatched performance and efficiency. With low bias current, high voltage gain, and wide temperature range, the TLV2442CDR provides exceptional value for your projects. Trust Texas Instruments to provide superior technology that meets your needs every time. Elevate your designs with the TLV2442CDR and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Input Offset Voltage: 2000 uV

Low input offset voltage contributes to high precision and accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 0.00006 uA

Low bias current helps in minimizing power consumption and maintaining stable operation of the amplifier.

Surface Mount: YES

Enables easy integration into compact electronic devices and provides versatility in mounting options.

No. of Functions: 2

Having multiple functions in one package allows for more complex signal processing capabilities in a single component.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in reducing external noise interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 3

Operates within a low supply voltage range, making it suitable for low-power applications.

Power Supplies (V): +-1.35/+-5/2.7/10

Offers flexibility in power supply options to meet various application requirements.

No. of Terminals: 8

Sufficient terminals for connecting external components and interfacing with other circuitry.

Maximum Input Offset Current (IIO): 0.00006 uA

Low input offset current contributes to high precision and accuracy in signal processing applications.

Package Style (Meter): SMALL OUTLINE

Compact package size facilitates space-saving designs in electronic circuits.

Minimum Slew Rate: 0.65 V/us

Fast slew rate enables rapid response to input signal changes, making it suitable for dynamic signal processing applications.

Maximum Supply Voltage Limit: 12 V

Can handle higher supply voltages for robust operation in various electrical environments.

Frequency Compensation: YES

Integrated frequency compensation ensures stability and reliable performance over a range of operating conditions.

Minimum Voltage Gain: 700

High minimum voltage gain allows for amplification of weak signals without significant distortion.

Minimum Operating Temperature: 0 °C

Wide operating temperature range enables reliable operation in diverse environmental conditions.

Temperature Grade: COMMERCIAL

Suitable for use in commercial applications where performance and reliability are key requirements.

Nominal Unity Gain Bandwidth: 52 kHz

Provides a balance between bandwidth and gain for versatile signal processing capabilities.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation for efficient signal processing.

Amplifier Type: OPERATIONAL AMPLIFIER

Op Amps are widely used in various electronic circuits for signal amplification, filtering, and other applications.

Maximum Supply Current: 0.3 mA

Low supply current consumption for energy-efficient operation in battery-powered devices.

Packing Method: TR

Tape and reel packaging method for easy handling, storage, and assembly in automated production processes.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2442CDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

52 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

700

Minimum Slew Rate:

0.65 V/us

Nominal Slew Rate:

0.02 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

300 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2442CDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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