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TLV2422QDRG4

Texas Instruments

TLV2422QDRG4 by Texas Instruments

TLV2422QDRG4 by Texas Instruments is a dual operational amplifier with low bias current (0.0003 uA) and high common mode rejection ratio (83 dB). Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 46 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,467 parts In-Stock

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Digiode

USA . 3,810 parts In-Stock

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One Stop Electronics

USA . 931 parts In-Stock

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$5.410

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Parana Technologies

USA . 2,213 parts In-Stock

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$5.505

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$6.248

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DigiPath Technology Company

USA . 645 parts In-Stock

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$6.061

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$5.576

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645

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ChromeModa Solutions

Germany . 3,611 parts In-Stock

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$6.185

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$5.072

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IDEA Electronic Components Group

UK . 807 parts In-Stock

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$6.185

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$5.566

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AZTECH Wire

Italy . 242 parts In-Stock

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$14.412

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Microchip USA

USA . 4,097 parts In-Stock

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Corphita

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Kepictronics

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Overview

Experience unparalleled performance and reliability with the TLV2422QDRG4 operational amplifiers from Texas Instruments. Designed with cutting-edge technology, these op amps offer exceptional precision and efficiency for a wide range of applications. Whether you're working on automotive electronics, consumer electronics, or industrial automation, the TLV2422QDRG4 provides unmatched value with its low bias current, micropower capability, and high voltage gain. Trust Texas Instruments to deliver quality products that elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Input Offset Voltage: 2500 uV

Low offset voltage helps in maintaining accurate output signal and minimizing errors in circuit applications.

Maximum Average Bias Current (IIB): 0.0003 uA

Low bias current helps in reducing power consumption and improving the overall efficiency of the circuit.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio minimizes noise and interference in the input signal, resulting in clean and accurate output.

Nominal Supply Voltage / Vsup (V): 3

Low supply voltage requirement makes it suitable for low power applications and extends battery life.

Frequency Compensation: YES

Provides stability and prevents oscillations in the amplifier circuit, ensuring reliable performance.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications where reliability and performance in extreme temperatures are required.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making it ideal for battery-powered devices and sensor applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are widely used for signal processing and amplification in various electronic circuits, making this product versatile and useful in a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2422QDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

46 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

2500 uV

Minimum Voltage Gain:

2000

Minimum Slew Rate:

0.008 V/us

Nominal Slew Rate:

0.02 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

175 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2422QDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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