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TLV2422QDG4

Texas Instruments

TLV2422QDG4 by Texas Instruments

TLV2422QDG4 by Texas Instruments is a dual operational amplifier with low bias current (0.0003 uA) and high common mode rejection ratio (83 dB). Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 46 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,178 parts In-Stock

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Digiode

USA . 3,783 parts In-Stock

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One Stop Electronics

USA . 381 parts In-Stock

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$3.410

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381

$3.410

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Parana Technologies

USA . 1,932 parts In-Stock

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$6.441

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$7.185

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DigiPath Technology Company

USA . 2,189 parts In-Stock

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$7.092

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$6.525

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$7.092

$6.525

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ChromeModa Solutions

Germany . 6,532 parts In-Stock

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$7.237

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$5.934

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$5.934

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IDEA Electronic Components Group

UK . 2,092 parts In-Stock

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$7.237

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$6.513

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$7.237

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AZTECH Wire

Italy . 783 parts In-Stock

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$14.258

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783

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Component Stockers USA

USA . 453 parts In-Stock

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$99.990

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Microchip USA

USA . 4,673 parts In-Stock

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Corphita

USA . 2,919 parts In-Stock

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Overview

Unleash the power of high-quality operational amplifiers with the TLV2422QDG4 by Texas Instruments. Designed to deliver exceptional performance and reliability, this product offers versatile applications in various electronic systems. With Texas Instruments’ reputation for excellence in manufacturing, you can trust that the TLV2422QDG4 will provide unmatched value, precision, and efficiency. Experience seamless operation and enhanced functionality with this innovative solution that meets the demands of today’s advanced technology. Elevate your projects with the TLV2422QDG4 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and reliable, making the product suitable for various applications.

Maximum Input Offset Voltage: 2500 uV

Low input offset voltage ensures accuracy in signal processing, making it ideal for precision applications.

Surface Mount: YES

Surface mount capability makes installation easy and saves space on the circuit board.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio helps in rejecting noise and interference from the input signal.

Power Supplies (V): +-1.35/+-5/2.7/10

Wide range of power supply options allows flexibility in operating the amplifier in different voltage conditions.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit.

Low-Bias: YES

Low bias current helps in minimizing the energy consumption of the amplifier, making it suitable for low-power applications.

Technology: CMOS

CMOS technology offers high input impedance, low power consumption, and compatibility with various digital circuits.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile devices used in a wide range of applications such as signal conditioning, filtering, and amplification.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2422QDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

46 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

2500 uV

Minimum Voltage Gain:

2000

Minimum Slew Rate:

0.008 V/us

Nominal Slew Rate:

0.02 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

175 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2422QDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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