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TLV2404IDRG4

Texas Instruments

TLV2404IDRG4 by Texas Instruments

TLV2404IDRG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, featuring low bias current (0.0009 uA) and high common mode rejection ratio (120 dB). Ideal for automotive applications due to its small outline package and wide temperature range (-40 to 125 °C).

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,693 parts In-Stock

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Digiode

USA . 2,429 parts In-Stock

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One Stop Electronics

USA . 874 parts In-Stock

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$2.410

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AZTECH Wire

Italy . 477 parts In-Stock

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$5.650

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Parana Technologies

USA . 1,202 parts In-Stock

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$6.311

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$7.060

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DigiPath Technology Company

USA . 110 parts In-Stock

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$6.949

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ChromeModa Solutions

Germany . 3,944 parts In-Stock

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$7.091

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$5.815

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IDEA Electronic Components Group

UK . 918 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,306 parts In-Stock

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Microchip USA

USA . 12,502 parts In-Stock

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Corphita

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Overview

Elevate your electronic designs with the TLV2404IDRG4 from Texas Instruments, a trusted manufacturer known for top-quality operational amplifiers. Perfect for a wide range of applications, this versatile component offers unparalleled performance and reliability. With its low bias current and high common mode rejection ratio, the TLV2404IDRG4 delivers superior precision and accuracy. Upgrade your projects today with this cutting-edge amplifier and experience the difference it can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Maximum Input Offset Voltage: 1500 uV

With a low maximum input offset voltage, this operational amplifier ensures accurate and precise signal processing.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on the circuit board.

Nominal Common Mode Reject Ratio: 120 dB

High common mode reject ratio indicates the amplifier's ability to filter out noise and interference for reliable performance.

Nominal Supply Voltage / Vsup (V): 2.7

The low nominal supply voltage requirement makes this op amp energy-efficient and suitable for low-power applications.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier, enhancing performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed for high gain, accuracy, and stability in various circuit applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the amplifier suitable for battery-operated devices and high-impedance circuits.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2404IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.25/±8/2.5/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.5 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

1500 uV

Minimum Voltage Gain:

130000

Nominal Slew Rate:

2500 V/us

Maximum Input Offset Current (IIO):

250 pA

Peak Bias Current:

900 pA

Maximum Bias Current (IIB) @25 °C:

300 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

17 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3.8 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2404IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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