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TLV2344IPWRG4

Texas Instruments

TLV2344IPWRG4 by Texas Instruments

TLV2344IPWRG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, Vsup of 3/5V, and 78dB CMRR. Ideal for industrial applications, it has low bias current (0.002uA), high voltage gain (2000), and operates b/w -40 to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,697 parts In-Stock

1+ parts

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3,697

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Digiode

USA . 3,075 parts In-Stock

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3,075

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,955 parts In-Stock

1+ parts

$3.169

100+ parts

-

1k+ parts

$3.690

10k+ parts

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1,955

$3.169

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$3.690

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DigiPath Technology Company

USA . 1,401 parts In-Stock

1+ parts

$3.490

100+ parts

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1,401

$3.490

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ChromeModa Solutions

Germany . 4,654 parts In-Stock

1+ parts

$3.561

100+ parts

$2.920

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4,654

$3.561

$2.920

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IDEA Electronic Components Group

UK . 719 parts In-Stock

1+ parts

$3.561

100+ parts

-

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$3.205

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719

$3.561

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$3.205

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One Stop Electronics

USA . 615 parts In-Stock

1+ parts

$8.410

100+ parts

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615

$8.410

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AZTECH Wire

Italy . 779 parts In-Stock

1+ parts

$16.769

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779

$16.769

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Component Stockers USA

USA . 758 parts In-Stock

1+ parts

$99.990

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758

$99.990

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Microchip USA

USA . 298 parts In-Stock

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298

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Corphita

USA . 294 parts In-Stock

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Overview

Experience high-quality performance with the TLV2344IPWRG4 Operational Amplifier by Texas Instruments. This versatile component offers exceptional value and benefits in various applications, thanks to its advanced technology and reliable manufacturing standards. Whether you need precision amplification or signal processing capabilities, this amplifier provides the solution you're looking for. Trust in Texas Instruments for superior quality and innovation that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability, making the product suitable for various applications.

Maximum Input Offset Voltage: 12000 uV

Low input offset voltage ensures accurate and precise signal processing.

Maximum Average Bias Current (IIB): 0.002 uA

Low average bias current helps in minimizing power consumption and improving efficiency.

No. of Functions: 4

Having multiple functions in one device offers versatility and flexibility in application usage.

Nominal Common Mode Reject Ratio: 78 dB

High common mode rejection ratio helps in suppressing common noise and interference in the signal.

Nominal Supply Voltage / Vsup (V): 3

Low supply voltage requirement reduces power consumption and makes it suitable for battery-operated devices.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures product reliability in various environments.

Nominal Unity Gain Bandwidth: 790 kHz

High unity gain bandwidth allows for high-speed signal processing and amplification.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is suitable for various amplification and signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2344IPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

790 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

2 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

8.8 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

TLV2344IPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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