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TLV2344IPW

Texas Instruments

TLV2344IPW by Texas Instruments

TLV2344IPW by Texas Instruments is a CMOS Operational Amplifier with 4 functions, 12000 uV max input offset voltage, and 78 dB nominal CMRR. Ideal for industrial applications requiring low-bias amplification in a compact thin profile package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,603 parts In-Stock

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Digiode

USA . 4,016 parts In-Stock

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Parana Technologies

USA . 1,936 parts In-Stock

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$1.030

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$1.898

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DigiPath Technology Company

USA . 1,301 parts In-Stock

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$1.134

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ChromeModa Solutions

Germany . 4,620 parts In-Stock

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$1.157

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$0.949

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$1.157

$0.949

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IDEA Electronic Components Group

UK . 2,255 parts In-Stock

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$1.157

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$1.041

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One Stop Electronics

USA . 1,093 parts In-Stock

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$2.410

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AZTECH Wire

Italy . 329 parts In-Stock

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$11.527

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QUARKTWIN TECHNOLOGY LTD

USA . 20,066 parts In-Stock

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Corphita

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Microchip USA

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Assy Fe

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Overview

Looking for top-notch performance in your operational amplifier needs? Look no further than the TLV2344IPW by Texas Instruments. With a reputation for excellence, Texas Instruments delivers superior quality and reliability in their products. The TLV2344IPW is perfect for a wide range of applications due to its versatility and precision. Experience the value and benefits that this high-quality operational amplifier offers, providing exceptional performance and efficiency for all your electronic projects. Trust Texas Instruments to deliver the best in class operational amplifiers for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, making it suitable for various environments.

Maximum Input Offset Voltage: 12000 uV

Low input offset voltage ensures accuracy in signal processing, making this operational amplifier reliable for precision applications.

Maximum Average Bias Current (IIB): 0.002 uA

Low bias current reduces the impact of additional currents on the signal path, improving the overall performance of the amplifier.

Nominal Common Mode Reject Ratio: 78 dB

High common mode rejection ratio indicates the amplifier's ability to reject common-mode noise, ensuring a clean output signal.

Nominal Supply Voltage / Vsup (V): 3

Stable supply voltage of 3V ensures consistent performance of the operational amplifier within its specified operating range.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the operational amplifier energy-efficient and suitable for battery-powered applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2344IPW attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

790 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

2.1 V/us

Peak Bias Current:

2 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

8.8 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

TLV2344IPW Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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