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TLV2264QDR

Texas Instruments

TLV2264QDR by Texas Instruments

TLV2264QDR by Texas Instruments is a CMOS Operational Amplifier with 4 functions, 3000 uV Max Input Offset Voltage, and 75 dB Nominal CMRR. Ideal for automotive applications due to its low-bias micropower technology and VOLTAGE-FEEDBACK architecture. Package style is SMALL OUTLINE with GULL WING terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,421 parts In-Stock

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4,421

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Vyrian

USA . 3,372 parts In-Stock

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3,372

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Distributors (Availability)

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Parana Technologies

USA . 923 parts In-Stock

1+ parts

$4.440

100+ parts

$412.341

1k+ parts

$3.996

10k+ parts

-

923

$4.440

$412.341

$3.996

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DigiPath Technology Company

USA . 656 parts In-Stock

1+ parts

$4.889

100+ parts

$4.498

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-

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656

$4.889

$4.498

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ChromeModa Solutions

Germany . 1,594 parts In-Stock

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$4.989

100+ parts

$4.091

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1,594

$4.989

$4.091

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IDEA Electronic Components Group

UK . 850 parts In-Stock

1+ parts

$4.989

100+ parts

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$4.490

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850

$4.989

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$4.490

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AZTECH Wire

Italy . 478 parts In-Stock

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$6.381

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478

$6.381

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One Stop Electronics

USA . 1,637 parts In-Stock

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$7.410

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1,637

$7.410

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Component Stockers USA

USA . 605 parts In-Stock

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$99.990

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605

$99.990

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Corphita

USA . 2,604 parts In-Stock

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Microchip USA

USA . 314 parts In-Stock

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Overview

Elevate your projects with the TLV2264QDR by Texas Instruments, a high-quality operational amplifier designed to deliver superior performance and reliability. With its innovative CMOS technology, low-bias design, and micropower capabilities, this amplifier is perfect for a wide range of applications in automotive and industrial settings. Trust Texas Instruments' reputation for excellence and choose the TLV2264QDR for exceptional value, precision, and efficiency in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for long-lasting use.

Maximum Input Offset Voltage: 3000 uV

Low offset voltage for accurate signal processing.

Maximum Average Bias Current (IIB): 0.0008 uA

Low bias current for minimal power consumption.

Surface Mount: YES

Easy to install on a printed circuit board.

Nominal Supply Voltage / Vsup (V): 3

Suitable for a variety of applications with a 3V supply voltage.

Minimum Slew Rate: 0.25 V/us

Fast response time for dynamic signal processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Architecture: VOLTAGE-FEEDBACK

Provides stable and accurate voltage amplification.

Nominal Unity Gain Bandwidth: 670 kHz

High unity gain bandwidth for versatile performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2264QDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

670 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.25 V/us

Nominal Slew Rate:

0.55 V/us

Peak Bias Current:

800 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2264QDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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