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TLV2264AMJB

Texas Instruments

TLV2264AMJB by Texas Instruments

TLV2264AMJB by Texas Instruments is a CMOS Operational Amplifier with 4 functions, offering low bias current of 0.00006 uA and max input offset voltage of 950 uV. Ideal for military applications due to MIL-STD-883 screening level, it operates at temperatures ranging from -55 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,641 parts In-Stock

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Digiode

USA . 4,125 parts In-Stock

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Parana Technologies

USA . 1,426 parts In-Stock

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$1.154

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$1.968

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$1.154

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$1.968

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DigiPath Technology Company

USA . 2,188 parts In-Stock

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$1.271

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$1.169

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$1.271

$1.169

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ChromeModa Solutions

Germany . 3,736 parts In-Stock

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$1.297

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$1.064

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3,736

$1.297

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IDEA Electronic Components Group

UK . 479 parts In-Stock

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$1.297

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$1.167

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479

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One Stop Electronics

USA . 200 parts In-Stock

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$8.410

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200

$8.410

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AZTECH Wire

Italy . 843 parts In-Stock

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$12.713

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Corphita

USA . 3,563 parts In-Stock

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Component Stockers USA

USA . 1,936 parts In-Stock

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$43.300

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Microchip USA

USA . 957 parts In-Stock

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Overview

Experience unmatched performance with the TLV2264AMJB by Texas Instruments, a leading manufacturer in operational amplifiers. Ideal for a wide range of applications, this high-quality op amp offers customers superior value and benefits. With its micropower technology, low-bias design, and military-grade temperature grade, the TLV2264AMJB delivers exceptional precision and reliability. Trust Texas Instruments for top-notch quality and performance in your electronics projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and reliable performance in various environmental conditions.

Maximum Input Offset Voltage: 950 uV

The low maximum input offset voltage helps in minimizing errors in signal processing, making this operational amplifier suitable for precision applications.

Nominal Common Mode Reject Ratio: 83 dB

With a high common mode reject ratio, this operational amplifier is effective in rejecting common mode noise and interference, resulting in cleaner output signals.

Minimum Slew Rate: 0.25 V/us

The minimum slew rate indicates the speed at which the operational amplifier can respond to changes in input signals, making it suitable for fast-response applications.

Technology: CMOS

The CMOS technology used in this operational amplifier ensures low power consumption, making it ideal for applications where power efficiency is crucial.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in a wide range of applications including signal amplification, filtering, and instrumentation.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2264AMJB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

710 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

950 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.25 V/us

Nominal Slew Rate:

0.55 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.77 in (19.56 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

FL14,.3

Trade Compliance

TLV2264AMJB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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