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TLV2262QDR

Texas Instruments

TLV2262QDR by Texas Instruments

TLV2262QDR by Texas Instruments is a dual operational amplifier with 3000uV max input offset voltage, 75dB CMRR, and 670kHz unity gain bandwidth. Ideal for automotive applications due to its low-bias current, micropower technology, and compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,587 parts In-Stock

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Digiode

USA . 4,660 parts In-Stock

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4,660

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Distributors (Availability)

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Parana Technologies

USA . 817 parts In-Stock

1+ parts

$3.381

100+ parts

-

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$3.908

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817

$3.381

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$3.908

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DigiPath Technology Company

USA . 90 parts In-Stock

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$3.723

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$3.425

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90

$3.723

$3.425

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ChromeModa Solutions

Germany . 1,837 parts In-Stock

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$3.799

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$3.115

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1,837

$3.799

$3.115

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IDEA Electronic Components Group

UK . 747 parts In-Stock

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$3.799

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$3.419

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747

$3.799

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$3.419

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One Stop Electronics

USA . 1,380 parts In-Stock

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$8.410

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1,380

$8.410

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AZTECH Wire

Italy . 360 parts In-Stock

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$18.221

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360

$18.221

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Component Stockers USA

USA . 708 parts In-Stock

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$99.990

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Corphita

USA . 3,386 parts In-Stock

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Microchip USA

USA . 421 parts In-Stock

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Overview

Elevate your circuit designs with the Texas Instruments TLV2262QDR operational amplifier. Crafted with precision by a trusted manufacturer, this op amp offers unparalleled performance and reliability for a wide range of applications. With micropower technology and low-bias design, this amplifier delivers high-quality signal processing with minimal power consumption. Upgrade your projects today with the TLV2262QDR and experience the superior value and benefits it brings to your electronic creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product suitable for various applications.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures high precision in signal processing.

Maximum Average Bias Current (IIB): 0.0008 uA

Low bias current results in minimized power consumption and improved signal accuracy.

Surface Mount: YES

Surface mount package allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in reducing noise and interference in the output signal.

Nominal Supply Voltage / Vsup (V): 3

Operates at a low supply voltage, making it suitable for low-power applications.

Minimum Slew Rate: 0.25 V/us

Fast slew rate enables the op amp to respond quickly to input voltage changes.

Maximum Supply Voltage Limit: 16 V

Wide supply voltage range allows flexibility in power supply options.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the circuit.

Minimum Voltage Gain: 25000

High voltage gain amplifies the input signal accurately.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance.

Amplifier Type: OPERATIONAL AMPLIFIER

Op amps are versatile components commonly used in signal conditioning and amplification circuits.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2262QDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

670 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.25 V/us

Nominal Slew Rate:

0.55 V/us

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2262QDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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