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TLV2231IDBVT

Texas Instruments

TLV2231IDBVT by Texas Instruments

TLV2231IDBVT by Texas Instruments is a CMOS Operational Amplifier with 3000uV Max Input Offset Voltage, 70dB Nominal CMRR, and 1900kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low-bias amplification in compact designs due to its micropower consumption and small outline package.

Median Price

$0.936

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 49 parts In-Stock

1+ parts

$0.217

100+ parts

$0.210

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-

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49

$0.217

$0.210

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Chip1Stop

Japan . 49 parts In-Stock

1+ parts

$1.150

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-

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49

$1.150

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DigiKey

USA . 89 parts In-Stock

1+ parts

$1.900

100+ parts

$1.274

1k+ parts

-

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89

$1.900

$1.274

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RS (Exports)

UK . 250 parts In-Stock

1+ parts

-

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$0.936

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250

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$0.936

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Verical

USA . 49 parts In-Stock

1+ parts

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$0.210

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49

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$0.210

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Distributors (In-Stock)

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Digiode

USA . 306 parts In-Stock

1+ parts

$0.757

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306

$0.757

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DF Sales Co.

USA . 203 parts In-Stock

1+ parts

$1.600

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203

$1.600

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DF Sales Co.

USA . 203 parts In-Stock

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$1.600

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203

$1.600

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Chip Stock

USA . 20,170 parts In-Stock

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Vyrian

USA . 7,675 parts In-Stock

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7,675

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HZD GmbH

Germany . 3,000 parts In-Stock

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3,000

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ACDS - Activité Composants Distribution Service

France . 500 parts In-Stock

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500

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Holdelec - ElecDif-Pro

France . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,762 parts In-Stock

1+ parts

$0.717

100+ parts

-

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3,762

$0.717

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Parana Technologies

USA . 1,294 parts In-Stock

1+ parts

$5.571

100+ parts

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1k+ parts

$6.358

10k+ parts

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1,294

$5.571

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$6.358

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DigiPath Technology Company

USA . 607 parts In-Stock

1+ parts

$6.134

100+ parts

$5.643

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607

$6.134

$5.643

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ChromeModa Solutions

Germany . 2,652 parts In-Stock

1+ parts

$6.259

100+ parts

$5.132

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2,652

$6.259

$5.132

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IDEA Electronic Components Group

UK . 1,574 parts In-Stock

1+ parts

$6.259

100+ parts

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$5.633

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1,574

$6.259

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$5.633

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QUARKTWIN TECHNOLOGY LTD

USA . 28,176 parts In-Stock

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Lixinc

USA . 12,859 parts In-Stock

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12,859

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Perfect Parts

USA . 5,570 parts In-Stock

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5,570

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Metaverse IC Inc.

Canada . 358 parts In-Stock

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358

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Overview

Discover the unparalleled performance of the TLV2231IDBVT from Texas Instruments, a cutting-edge operational amplifier designed for a wide range of applications. Crafted with precision and expertise, this op amp offers superior quality and reliability, making it an ideal choice for industrial-grade projects. With its micropower technology and low-bias design, customers can expect exceptional efficiency and extended battery life. Unleash the full potential of your circuits with the TLV2231IDBVT and experience unmatched value and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accurate and precise signal processing.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort.

Nominal Common Mode Reject Ratio: 70 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 3

Operates at a low supply voltage, making it suitable for low power applications.

Minimum Slew Rate: 0.5 V/us

Fast slew rate enables rapid response to input signal changes, ideal for dynamic signal processing.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making it efficient and versatile.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals accurately and with high stability.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2231IDBVT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.9 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

300

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1.6 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.3 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

TLV2231IDBVT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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