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TLC7701QDRG4

Texas Instruments

TLC7701QDRG4 by Texas Instruments

TLC7701QDRG4 by Texas Instruments is a Power Management IC with Vsup ranging from 2V to 6V. It has 8 terminals, operates in temperatures from -40°C to 125°C, and consumes 0.016mA of current. This CMOS technology IC is used for power supply support circuits in automotive applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,830 parts In-Stock

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Digiode

USA . 3,319 parts In-Stock

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3,319

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One Stop Electronics

USA . 1,252 parts In-Stock

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$2.500

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$2.500

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Ampacity Inc.

Singapore . 971 parts In-Stock

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$5.500

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971

$5.500

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Semicontronic

India . 1,105 parts In-Stock

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$6.500

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$6.338

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$6.305

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1,105

$6.500

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$6.305

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Parana Technologies

USA . 1,526 parts In-Stock

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$7.928

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$8.488

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$8.488

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DigiPath Technology Company

USA . 1,628 parts In-Stock

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$8.730

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$8.031

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$8.730

$8.031

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IDEA Electronic Components Group

UK . 347 parts In-Stock

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$8.908

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$8.463

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$8.017

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347

$8.908

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$8.017

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ChromeModa Solutions

Germany . 83 parts In-Stock

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$8.908

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$7.305

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83

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AZTECH Wire

Italy . 308 parts In-Stock

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$19.620

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Kepictronics

USA . 4,550 parts In-Stock

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Corphita

USA . 3,616 parts In-Stock

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Microchip USA

USA . 1,264 parts In-Stock

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Corohmni

South Africa . 51 parts In-Stock

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Overview

Discover the TLC7701QDRG4 by Texas Instruments, a top-tier Power Management IC that guarantees reliability and performance. Manufactured by industry leader Texas Instruments, this product is designed to meet the highest standards of quality and efficiency. Ideal for a wide range of applications, this IC offers unparalleled value and benefits to customers seeking a superior solution for power supply support circuits. Trust in Texas Instruments and elevate your projects with the TLC7701QDRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into electronic circuits, saving space and simplifying manufacturing processes.

Nominal Supply Voltage (Vsup): 2.7 V

The nominal supply voltage of 2.7V is within a common range for power management ICs, offering compatibility with a wide variety of applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the IC to other components, allowing for versatile circuit designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the IC can perform reliably in hot environments without risk of malfunction.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the IC can function even in extreme cold conditions, increasing its usability.

Technology: CMOS

Being based on CMOS technology, the IC offers low power consumption and high noise immunity, making it efficient and reliable in various applications.

Maximum Supply Voltage (Vsup): 6 V

The maximum supply voltage of 6V allows the IC to handle a wide range of input voltages, making it suitable for diverse power management requirements.

Technical Specifications

Power Management ICs TLC7701QDRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

POWER-ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.016 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.1V

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.9 mm

Trade Compliance

TLC7701QDRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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