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TLC04N3

Texas Instruments

TLC04N3 by Texas Instruments

TLC04N3 by Texas Instruments is a CMOS active filter with 8 terminals and +-2.5/+-5V power supplies. It features a switched capacitor filter with Butterworth transfer characteristics, ideal for lowpass filtering applications. The package style is in-line, suitable for commercial temperature grade environments up to 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,892 parts In-Stock

1+ parts

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8,892

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Digiode

USA . 1,063 parts In-Stock

1+ parts

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1,063

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 694 parts In-Stock

1+ parts

$5.690

100+ parts

-

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694

$5.690

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AZTECH Wire

Italy . 656 parts In-Stock

1+ parts

$15.597

100+ parts

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656

$15.597

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Parana Technologies

USA . 1,154 parts In-Stock

1+ parts

$17.440

100+ parts

-

1k+ parts

$17.641

10k+ parts

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1,154

$17.440

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$17.641

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ChromeModa Solutions

Germany . 6,635 parts In-Stock

1+ parts

$19.596

100+ parts

$16.069

1k+ parts

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10k+ parts

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6,635

$19.596

$16.069

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IDEA Electronic Components Group

UK . 2,122 parts In-Stock

1+ parts

$19.596

100+ parts

$18.616

1k+ parts

$17.636

10k+ parts

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2,122

$19.596

$18.616

$17.636

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Corphita

USA . 2,427 parts In-Stock

1+ parts

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2,427

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DigiPath Technology Company

USA . 629 parts In-Stock

1+ parts

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$17.668

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629

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$17.668

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Overview

Elevate your audio experience with the TLC04N3 by Texas Instruments, a high-quality active filter designed to provide seamless sound filtering. Manufactured by industry leader Texas Instruments, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, from audio equipment to telecommunications, the TLC04N3 delivers exceptional value with its switched capacitor technology and low-pass response type. Upgrade your projects with the TLC04N3 and experience the superior benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the active filter efficient and reliable in various applications.

Active Filter Type: SWITCHED CAPACITOR FILTER

Switched capacitor filters provide precise signal processing with low distortion, making this product suitable for high-quality audio and signal processing applications.

Power Supplies (V): +-2.5/+-5

The flexible power supply range allows the active filter to be compatible with a wide range of electronic systems, providing versatility in design and integration.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures the active filter can withstand demanding environmental conditions, enhancing its reliability and longevity.

Technical Specifications

Active Filters TLC04N3 attributes and parameters. Explore more Active Filters devices from Texas Instruments

Electrical Characteristics

Power Supply:

±2.5/±5 V

Performance Parameters

Semiconductor Technology:

CMOS

Response Type:

Filter Technology:

Transfer Characteristics:

Butterworth

Filter Order:

4th

Environmental Characteristics

Maximum Operating Temperature:

70 °C (158 °F)

Minimum Operating Temperature:

0 °C (32 °F)

Temperature Grade:

Connectivity

Total Functions:

1

Total Terminals:

8

Terminal Form:

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Physical Characteristics

Package Style:

In-Line

Form Factor:

Rectangular

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Body Material:

Plastic/Epoxy

Surface Mounting:

No

JESD-30 Code:

R-PDIP-T8

Trade Compliance

TLC04N3 Active Filters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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