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TL35072DR

Texas Instruments

TL35072DR by Texas Instruments

TL35072DR by Texas Instruments is a dual operational amplifier with 7000uV max input offset voltage, 97dB nominal CMRR, and 4500kHz unity gain bandwidth. Ideal for military-grade applications due to its -55 to 125 °C operating temperature range and VOLTAGE-FEEDBACK architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,972 parts In-Stock

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3,972

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Vyrian

USA . 2,870 parts In-Stock

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2,870

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One Stop Electronics

USA . 187 parts In-Stock

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$2.410

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187

$2.410

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Parana Technologies

USA . 71 parts In-Stock

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$3.387

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$3.914

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71

$3.387

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$3.914

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IDEA Electronic Components Group

UK . 1,264 parts In-Stock

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$3.806

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$3.425

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1,264

$3.806

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$3.425

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ChromeModa Solutions

Germany . 1,031 parts In-Stock

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$3.806

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$3.121

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1,031

$3.806

$3.121

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AZTECH Wire

Italy . 596 parts In-Stock

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$9.324

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596

$9.324

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A-Z Elektronik GmbH

Germany . 13,230 parts In-Stock

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13,230

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DigiPath Technology Company

USA . 2,371 parts In-Stock

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$3.431

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2,371

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$3.431

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Corphita

USA . 1,520 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the TL35072DR operational amplifier by Texas Instruments. With a MILITARY-grade temperature grade and advanced VOLTAGE-FEEDBACK architecture, this small outline package delivers exceptional performance in a wide range of applications. Whether you're designing precision instrumentation or high-speed data acquisition systems, this dual terminal op amp offers superior common mode rejection and unity gain bandwidth to meet your most demanding requirements. Trust Texas Instruments for cutting-edge technology and unmatched value in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliable performance and easy handling.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate signal processing and minimal distortions.

Maximum Average Bias Current (IIB): -1.8 uA

Low bias current minimizes power consumption and enhances efficiency.

Surface Mount: YES

Easy to integrate into circuit boards for streamlined manufacturing processes.

Nominal Common Mode Reject Ratio: 97 dB

High rejection of common-mode signals ensures clean output signals.

Nominal Supply Voltage / Vsup (V): 15

Suitable voltage supply for stable operation and performance.

Minimum Slew Rate: 8 V/us

Fast slew rate allows for quick signal response and accurate amplification.

Minimum Voltage Gain: 25000

High voltage gain amplifies input signals effectively and results in strong output signals.

Technology: BIPOLAR

Bipolar technology ensures reliable performance and stability in various operating conditions.

Nominal Unity Gain Bandwidth: 4500 kHz

Wide bandwidth ensures high-speed signal processing and accurate amplification.

Technical Specifications

Operational Amplifiers (Op Amps) TL35072DR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

97 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

8 V/us

Nominal Slew Rate:

10 V/us

Peak Bias Current:

-1.8 uA

Maximum Bias Current (IIB) @25 °C:

1.5 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

9.4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TL35072DR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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