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TISP4395H3LM

Texas Instruments

TISP4395H3LM by Texas Instruments

TISP4395H3LM by Texas Instruments is a single silicon surge protector with 60A peak current, 320V DC voltage, and 395V breakdown voltage. It is a thyristor surge protector used in applications requiring protection against electrical surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,923 parts In-Stock

1+ parts

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7,923

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Legend Electronics Inc.

USA . 3,992 parts In-Stock

1+ parts

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3,992

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Digiode

USA . 1,197 parts In-Stock

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1,197

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,693 parts In-Stock

1+ parts

$3.630

100+ parts

-

1k+ parts

$4.141

10k+ parts

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1,693

$3.630

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$4.141

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DigiPath Technology Company

USA . 2,001 parts In-Stock

1+ parts

$3.997

100+ parts

-

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2,001

$3.997

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ChromeModa Solutions

Germany . 5,902 parts In-Stock

1+ parts

$4.079

100+ parts

$3.345

1k+ parts

-

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5,902

$4.079

$3.345

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IDEA Electronic Components Group

UK . 1,653 parts In-Stock

1+ parts

$4.079

100+ parts

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1k+ parts

$3.671

10k+ parts

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1,653

$4.079

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$3.671

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One Stop Electronics

USA . 387 parts In-Stock

1+ parts

$13.100

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387

$13.100

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AZTECH Wire

Italy . 623 parts In-Stock

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$15.537

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623

$15.537

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Corphita

USA . 1,362 parts In-Stock

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1,362

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Overview

Experience peace of mind with the TISP4395H3LM by Texas Instruments, a top-quality Silicon Surge Protector designed to safeguard your electronics from voltage spikes and surges. With decades of expertise in semiconductor technology, Texas Instruments delivers reliable protection for your devices. This single configuration protector offers a non-repetitive peak on-state current of 60A and a maximum DC off-state voltage of 320V, making it ideal for a wide range of applications. Invest in the TISP4395H3LM for reliable, long-lasting protection against unpredictable power fluctuations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Configuration: SINGLE

Simplified design for easy installation and maintenance.

Non Repetitive Peak On-state Current: 60 A

High current handling capacity ensures effective surge protection.

Package Shape: ROUND

Compact shape for convenient placement and integration.

Terminal Form: THROUGH-HOLE

Allows for secure connections and stable performance.

No. of Terminals: 2

Simple connection setup for efficient installation.

Package Style (Meter): CYLINDRICAL

Space-saving design for versatile applications.

Maximum DC Off-state Voltage: 320 V

Effective voltage protection to safeguard connected devices.

Maximum Operating Temperature: 150 °C

Wide temperature range ensures reliable performance in various conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Offers efficient surge protection with rapid response time.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions.

Terminal Position: BOTTOM

Facilitates easy installation and connection.

Maximum Holding Current: 600 mA

Ability to sustain continuous current flow for enhanced protection.

Maximum Breakdown Voltage: 395 V

A higher breakdown voltage ensures effective surge protection.

Technical Specifications

Silicon Surge Protectors TISP4395H3LM attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

395 V

Configuration:

Maximum DC Off-state Voltage:

320 V

Maximum Holding Current:

600 mA

JESD-30 Code:

O-PBCY-T2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4395H3LM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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