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TISP4350L3BJ

Texas Instruments

TISP4350L3BJ by Texas Instruments

TISP4350L3BJ by Texas Instruments is a single silicon surge protector with 13A peak current. It operates b/w -40 to 150°C, has 350V breakdown voltage, and 350mA holding current. Ideal for protecting electronic circuits from transient overvoltage events in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,027 parts In-Stock

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2,027

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Digiode

USA . 1,613 parts In-Stock

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1,613

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,259 parts In-Stock

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$0.100

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1,259

$0.100

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Parana Technologies

USA . 833 parts In-Stock

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$2.427

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$2.924

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833

$2.427

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$2.924

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DigiPath Technology Company

USA . 917 parts In-Stock

1+ parts

$2.672

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917

$2.672

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ChromeModa Solutions

Germany . 6,391 parts In-Stock

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$2.727

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$2.236

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6,391

$2.727

$2.236

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IDEA Electronic Components Group

UK . 516 parts In-Stock

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$2.727

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$2.454

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516

$2.727

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$2.454

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AZTECH Wire

Italy . 722 parts In-Stock

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$19.123

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722

$19.123

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One Stop Electronics

USA . 588 parts In-Stock

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$24.100

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588

$24.100

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Semicontronic

India . 760 parts In-Stock

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$28.100

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$27.398

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$27.257

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760

$28.100

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$27.257

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Corphita

USA . 3,062 parts In-Stock

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3,062

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Corohmni

South Africa . 412 parts In-Stock

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Overview

Protect your electronics with the TISP4350L3BJ from Texas Instruments, a top-quality Silicon Surge Protector designed to keep your devices safe from power surges. With a durable plastic/epoxy package body and a compact rectangular shape, this single configuration device is perfect for a variety of applications. Trust in Texas Instruments' reputation for excellence in manufacturing as you enjoy the peace of mind that comes with knowing your valuable equipment is protected. Say goodbye to potential damage and downtime with the TISP4350L3BJ, offering maximum protection and reliability for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body enhances the durability and protection of the surge protector.

Configuration: SINGLE

Single configuration makes the surge protector easy to install and use in various applications.

Non Repetitive Peak On-state Current: 13 A

With a high non-repetitive peak on-state current of 13 A, this surge protector can effectively handle surge currents and protect electronic devices.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation of the surge protector on circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design for the surge protector.

Terminal Form: C BEND

The C bend terminal form ensures secure and reliable connections for enhanced performance.

No. of Terminals: 2

Having 2 terminals simplifies the installation process and allows for a secure connection.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes the surge protector suitable for applications where space is limited.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this surge protector can withstand high temperature environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of a thyristor surge protector as the trigger device provides fast and efficient protection against surges.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in cold environments.

Terminal Position: DUAL

Dual terminal position allows for versatile installation options and ensures a stable connection.

Maximum Holding Current: 350 mA

The maximum holding current of 350 mA ensures that the surge protector can continue to provide protection even after a surge event.

Maximum Breakdown Voltage: 350 V

With a maximum breakdown voltage of 350 V, this surge protector offers reliable protection against voltage spikes.

Technical Specifications

Silicon Surge Protectors TISP4350L3BJ attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

350 V

Configuration:

Maximum Holding Current:

350 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

13 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4350L3BJ Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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