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TIC47

Texas Instruments

TIC47 by Texas Instruments

TIC47 by Texas Instruments is a single SCR with max. DC gate trigger current of 0.2mA and non-repetitive peak on-state current of 6A. It is used in applications requiring a max RMS on-state current of 0.6A, such as power control circuits for electrical equipment or appliances.

Median Price

$7.550

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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$7.550

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Vyrian

USA . 5,336 parts In-Stock

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ComSIT Distribution GmbH

Germany . 897 parts In-Stock

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Digiode

USA . 752 parts In-Stock

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Halfin

Belgium . 660 parts In-Stock

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660

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Resion

USA . 418 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 117 parts In-Stock

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Holdelec - ElecDif-Pro

France . 117 parts In-Stock

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Electronic Expediters

USA . 53 parts In-Stock

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Donberg Electronics Ltd

Ireland . 20 parts In-Stock

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Euro-Tech

UK . 10 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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ECAB

Sweden . 5 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,515 parts In-Stock

1+ parts

$2.558

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$237.536

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$2.302

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1,515

$2.558

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DigiPath Technology Company

USA . 146 parts In-Stock

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$2.817

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146

$2.817

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ChromeModa Solutions

Germany . 3,549 parts In-Stock

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$2.874

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$2.357

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$2.874

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IDEA Electronic Components Group

UK . 160 parts In-Stock

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$2.874

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$2.587

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$2.874

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AZTECH Wire

Italy . 643 parts In-Stock

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$16.260

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One Stop Electronics

USA . 306 parts In-Stock

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$24.100

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Corphita

USA . 3,766 parts In-Stock

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Overview

Unleash the power of TIC47 by Texas Instruments! Crafted with precision and excellence, this Silicon Controlled Rectifier offers unparalleled performance for a wide range of applications. Whether you're looking to control power in industrial machinery or regulate voltage in electronic circuits, the TIC47 delivers superior quality and reliability. With its single configuration and advanced design, this SCR ensures optimal efficiency and durability. Say goodbye to inefficiencies and hello to seamless operation with the TIC47 - your go-to solution for all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise control and triggering of the SCR, making it suitable for various applications.

Configuration: SINGLE

Simplified design with single configuration makes it easy to incorporate into electronic circuits.

Maximum On-state Current: 0.3 A

Capable of handling moderate levels of current, suitable for many small to medium power applications.

Repetitive Peak Reverse Voltage: 200 V

Can withstand high reverse voltages, making it reliable and versatile in different circuit scenarios.

Maximum Operating Temperature: 125 °C

Operates reliably at high temperatures, allowing for use in various industrial environments.

Trigger Device Type: SCR

Utilizing Silicon Controlled Rectifiers ensures reliable and stable triggering for precise control.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC47 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

6.8 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

.05 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.3 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.6 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC47 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-141-0564, 5961011410564, 5961-14-418-3539, 5961144183539

NIIN

011410564, 144183539

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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