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TAS5612APHD

Texas Instruments

TAS5612APHD by Texas Instruments

TAS5612APHD by Texas Instruments is an audio amplifier IC with 125W output power, suitable for commercial-grade applications. It operates at temperatures from 0 to 70°C and supports a supply voltage range of 10.8V to 13.2V. The package style includes flatpack, heat sink/slug, and thin profile options for versatile mounting solutions.

Median Price

$10.799

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,730 parts In-Stock

1+ parts

$10.799

100+ parts

$8.804

1k+ parts

$5.869

10k+ parts

-

1,730

$10.799

$8.804

$5.869

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 607 parts In-Stock

1+ parts

$10.259

100+ parts

-

1k+ parts

-

10k+ parts

-

607

$10.259

-

-

-

Vyrian

USA . 7,171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,171

-

-

-

-

Chip Stock

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,800

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,087 parts In-Stock

1+ parts

$2.747

100+ parts

-

1k+ parts

$3.230

10k+ parts

-

1,087

$2.747

-

$3.230

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.871

100+ parts

$2.613

1k+ parts

$2.354

10k+ parts

-

100

$2.871

$2.613

$2.354

-

DigiPath Technology Company

USA . 919 parts In-Stock

1+ parts

$3.025

100+ parts

$2.783

1k+ parts

-

10k+ parts

-

919

$3.025

$2.783

-

-

ChromeModa Solutions

Germany . 5,319 parts In-Stock

1+ parts

$3.087

100+ parts

$2.531

1k+ parts

-

10k+ parts

-

5,319

$3.087

$2.531

-

-

IDEA Electronic Components Group

UK . 761 parts In-Stock

1+ parts

$3.087

100+ parts

-

1k+ parts

$2.778

10k+ parts

-

761

$3.087

-

$2.778

-

Corphita

USA . 4,670 parts In-Stock

1+ parts

$9.719

100+ parts

-

1k+ parts

-

10k+ parts

-

4,670

$9.719

-

-

-

AZTECH Wire

Italy . 92 parts In-Stock

1+ parts

$21.050

100+ parts

-

1k+ parts

-

10k+ parts

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92

$21.050

-

-

-

Microchip USA

USA . 1,020 parts In-Stock

1+ parts

$27.050

100+ parts

$26.670

1k+ parts

$26.470

10k+ parts

$26.280

1,020

$27.050

$26.670

$26.470

$26.280

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,000

-

-

-

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Lixinc

USA . 3,527 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,527

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Overview

Unlock the power of superior audio performance with the TAS5612APHD by Texas Instruments. As a leader in the industry, Texas Instruments delivers cutting-edge technology in the Audio & Video Amplifiers category, providing customers with unmatched quality and reliability. Whether you're looking to enhance your home entertainment system or elevate your sound experience in professional settings, this audio amplifier offers a nominal output power of 125W and a nominal noise figure of 103dB. With a compact design and advanced features, the TAS5612APHD is the perfect solution for all your audio amplification needs. Elevate your listening experience today with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the product easy to handle and transport.

Surface Mount: YES

Surface mount technology allows for easy installation and saves space on a circuit board.

General IC Type: AUDIO AMPLIFIER

This product is specifically designed for audio amplification, ensuring high-quality sound output.

Nominal Output Power: 125 W

With a high output power of 125W, this amplifier can easily drive speakers and deliver clear and powerful sound.

Maximum Operating Temperature: 70 °C

The amplifier can operate efficiently at high temperatures without overheating, ensuring long-term reliability.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish provides excellent conductivity and corrosion resistance, enhancing the overall performance and lifespan of the product.

Width: 14 mm

Compact width allows the amplifier to be easily integrated into various audio systems without taking up too much space.

No. of Channels: 2

Dual channels allow for stereo sound output, providing a more immersive audio experience.

Peak Reflow Temperature °C: 260

The amplifier can withstand high reflow temperatures during the manufacturing process, ensuring reliable solder joints.

Maximum Supply Voltage (Vsup): 13.2 V

The amplifier can handle a high supply voltage, allowing for flexibility in power supply options.

Technical Specifications

Audio & Video Amplifiers TAS5612APHD attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

General IC Type:

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e4

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

Nominal Noise Figure:

103 dB

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

64

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Power:

125 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TQFP64,.63SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12,32.5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Voltage (Vsup):

13.2 V

Minimum Supply Voltage (Vsup):

10.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

TAS5612APHD General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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