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TAS5414ATDKDQ1G4

Texas Instruments

TAS5414ATDKDQ1G4 by Texas Instruments

TAS5414ATDKDQ1G4 by Texas Instruments is an audio amplifier IC with 4 channels, offering a nominal output power of 116W and gain of 32dB. It operates in industrial temperature range (-40 to 105°C) with a supply voltage range of 8-22V. Suitable for automotive applications due to AEC-Q100 screening level and compact package style (15.9mm x 11mm x 3.6mm).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,994 parts In-Stock

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3,994

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Digiode

USA . 3,889 parts In-Stock

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3,889

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 390 parts In-Stock

1+ parts

$2.875

100+ parts

-

1k+ parts

$3.366

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390

$2.875

-

$3.366

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ChromeModa Solutions

Germany . 5,883 parts In-Stock

1+ parts

$3.230

100+ parts

$2.649

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5,883

$3.230

$2.649

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IDEA Electronic Components Group

UK . 1,500 parts In-Stock

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$3.230

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-

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$2.907

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1,500

$3.230

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$2.907

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AZTECH Wire

Italy . 791 parts In-Stock

1+ parts

$15.626

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791

$15.626

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One Stop Electronics

USA . 329 parts In-Stock

1+ parts

$18.800

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329

$18.800

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Component Stockers USA

USA . 482 parts In-Stock

1+ parts

$99.990

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482

$99.990

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Corphita

USA . 2,863 parts In-Stock

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2,863

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Microchip USA

USA . 1,064 parts In-Stock

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1,064

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DigiPath Technology Company

USA . 340 parts In-Stock

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$2.912

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340

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$2.912

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Overview

Enhance your audio experience with the TAS5414ATDKDQ1G4 by Texas Instruments. Crafted with precision and expertise, this audio amplifier offers unparalleled quality and performance. Ideal for a wide range of applications in the audio and video industry, this product delivers superior sound output with a power supply of 14.4V and a nominal output power of 116W. With a compact design and high operating temperature range, customers can trust in the reliability and durability of this amplifier. Elevate your audio projects today with the TAS5414ATDKDQ1G4 – where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the amplifier easy to handle and resistant to damage.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

General IC Type: AUDIO AMPLIFIER

Designed specifically for audio amplification, ensuring high-quality sound output and performance.

Nominal Output Power: 116 W

With a high output power, this amplifier is capable of delivering loud and clear audio for a variety of applications.

No. of Channels: 4

Having four channels allows for more versatile audio setups, such as connecting multiple speakers or creating a surround sound system.

Technical Specifications

Audio & Video Amplifiers TAS5414ATDKDQ1G4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

General IC Type:

Gain:

32 dB

JESD-30 Code:

R-PDSO-G36

JESD-609 Code:

e4

Length:

15.9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

116 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP36,.56

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH

Peak Reflow Temperature (C):

245

Power Supplies (V):

14.4

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

3.6 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

300 mA

Maximum Supply Voltage (Vsup):

22 V

Minimum Supply Voltage (Vsup):

8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11 mm

Trade Compliance

TAS5414ATDKDQ1G4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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