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SNJ54S260J

Texas Instruments

SNJ54S260J by Texas Instruments

SNJ54S260J by Texas Instruments is a TTL logic gate with 2 functions, 5 inputs, and 6ns propagation delay at 5V. It is MILITARY grade with TIN LEAD finish, suitable for applications requiring fast signal processing in harsh environments. Package style is IN-LINE, with dimensions of 19.56mm x 7.62mm x 5.08mm and operates b/w -55°C to 125°C.

Median Price

$18.175

Lifecycle Status

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30

In-Stock Inventory

1k+

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DigiKey

USA . 217 parts In-Stock

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Rochester

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$14.540

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$13.010

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$12.250

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Verical

USA . 168 parts In-Stock

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$18.175

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$16.262

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$15.313

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Freelance Electronics

USA . 86 parts In-Stock

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$7.357

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Bristol Electronics

USA . 475 parts In-Stock

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Digiode

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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ACDS - Activité Composants Distribution Service

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Manoshevitz Elec. Sales

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North Shore Components

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Sogenti Electronics

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ComSIT Distribution GmbH

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Corel Iberica Componentes, S.L.

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Legend Electronics Inc.

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Inland Empire Components Inc.

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Electro Mavin

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First Choice Components Inc.

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Electronics Depot

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LWI Electronics Inc

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Odi Ramu Company

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Corphita

USA . 1,662 parts In-Stock

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$12.654

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Parana Technologies

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DigiPath Technology Company

USA . 126 parts In-Stock

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$28.154

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ChromeModa Solutions

Germany . 5,784 parts In-Stock

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IDEA Electronic Components Group

UK . 1,134 parts In-Stock

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Microchip USA

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Overview

Unlock the power of next-level logic gating with the Texas Instruments SNJ54S260J. With a reputation for top-notch quality and reliability, Texas Instruments delivers a product that exceeds expectations. Ideal for a range of applications, this logic gate offers unmatched performance and efficiency. Customers can trust in the value, benefits, and advantages that the SNJ54S260J brings to their projects. Elevate your designs with this high-quality solution from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of high-quality materials ensures durability and reliability of the product.

Propagation Delay At Nominal Supply: 6 ns

Low propagation delay ensures fast signal processing and high-speed performance.

No. of Functions: 2

Having multiple functions in a single device increases efficiency and saves space in circuit design.

Screening Level: MIL-PRF-38535

Meets military-grade screening standards for reliability and performance in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level commonly used in many electronic systems.

Load Capacitance (CL): 15 pF

Suitable for driving standard loads with low capacitance, ensuring compatibility with a wide range of applications.

Maximum Operating Temperature: 125 °C

Can handle high temperatures, making it suitable for use in demanding environments.

Minimum Operating Temperature: -55 °C

Operates efficiently in low-temperature conditions, providing versatility in various applications.

Technology: TTL

Utilizes reliable TTL technology known for its robust performance and compatibility with various systems.

Technical Specifications

Logic Gates SNJ54S260J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

S

JESD-30 Code:

R-CDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

1 Amp

No. of Functions:

2

No. of Inputs:

5

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

45 mA

Propagation Delay At Nominal Supply:

6 ns

Propagation Delay (tpd):

6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SNJ54S260J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-143-3219, 5962011433219, 5962-01-179-8618, 5962011798618, 5962-01-064-2697, 5962010642697

NIIN

011433219, 011798618, 010642697

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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