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SNJ54LS611JD

Texas Instruments

SNJ54LS611JD by Texas Instruments

SNJ54LS611JD by Texas Instruments is a MILITARY-grade TTL technology IC with 12 I/O lines, operating b/w -55 to 125 °C. It features a max supply voltage of 5.5 V and min of 4.5 V, suitable for PARALLEL IO PORT applications in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,353 parts In-Stock

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6,353

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Digiode

USA . 4,708 parts In-Stock

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4,708

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,009 parts In-Stock

1+ parts

$3.000

100+ parts

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1,009

$3.000

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AZTECH Wire

Italy . 531 parts In-Stock

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$7.105

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531

$7.105

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Parana Technologies

USA . 664 parts In-Stock

1+ parts

$50.557

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664

$50.557

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DigiPath Technology Company

USA . 2,202 parts In-Stock

1+ parts

$55.670

100+ parts

$51.216

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2,202

$55.670

$51.216

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ChromeModa Solutions

Germany . 5,423 parts In-Stock

1+ parts

$56.806

100+ parts

$46.581

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5,423

$56.806

$46.581

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IDEA Electronic Components Group

UK . 646 parts In-Stock

1+ parts

$56.806

100+ parts

$53.966

1k+ parts

$51.125

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646

$56.806

$53.966

$51.125

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Corohmni

South Africa . 828 parts In-Stock

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$73.606

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828

$73.606

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Corphita

USA . 3,414 parts In-Stock

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3,414

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Overview

Enhance your electronic projects with the SNJ54LS611JD by Texas Instruments, a top-tier manufacturer known for their superior quality and reliability. This Parallel I/O Port device offers unmatched value and benefits, providing 12 I/O lines for versatile applications. With a military-grade temperature rating and a rugged ceramic, metal-sealed package body, this IC is perfect for demanding environments where precision and durability are essential. Upgrade your designs today with the industry-leading technology of Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides high durability and reliability for the product, making it suitable for harsh environmental conditions.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage of 5.5V allows for compatibility with a wide range of systems and applications, providing flexibility in usage.

Screening Level: 38535Q/M;38534H;883B

The screening level ensures that the product meets stringent quality and reliability standards, making it suitable for military and aerospace applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and mounting within existing electronic systems, saving space and facilitating installation.

No. of Terminals: 40

The high number of terminals (40) provides ample connectivity options and versatility in interfacing with other devices or components.

Package Style (Meter): IN-LINE

The in-line package style offers a compact and streamlined design, suitable for space-constrained applications where efficiency is key.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage of 4.5V ensures reliable operation even in low power conditions, optimizing energy efficiency.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the product to operate under extreme heat conditions without performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures the product's functionality even in extremely cold environments, making it versatile for various applications.

Terminal Position: DUAL

The dual terminal position provides redundancy and improved connectivity, enhancing the reliability of the product in critical operations.

Temperature Grade: MILITARY

The military-grade temperature rating ensures the product's performance and reliability in rugged and demanding military applications where durability is essential.

Peripheral IC Type: PARALLEL IO PORT, GENERAL PURPOSE

The peripheral IC type of parallel I/O port with general-purpose functionality offers versatility and compatibility with a wide range of devices, enhancing usability.

Technology: TTL

The TTL technology employed in the product ensures fast and reliable data transmission, making it ideal for applications requiring high-speed parallel I/O operations.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and stable connections, suitable for applications where vibration or movement may be present.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V ensures compatibility with standard electronic systems and components, simplifying integration and usage.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54mm allows for easy alignment and connection with other components, enabling quick and hassle-free installation.

No. of I/O Lines: 12

The 12 I/O lines provide sufficient input and output options for data transfer and communication, making the product versatile for various applications.

Technical Specifications

Parallel I/O Ports SNJ54LS611JD attributes and parameters. Explore more Parallel I/O Ports devices from Texas Instruments

Specs

JESD-30 Code:

R-CDIP-T40

No. of I/O Lines:

12

No. of Ports:

1

No. of Terminals:

40

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Microprocessor ICs

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Peripheral IC Type:

Trade Compliance

SNJ54LS611JD Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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