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SNJ54HC165J

Texas Instruments

SNJ54HC165J by Texas Instruments

SNJ54HC165J by Texas Instruments is an 8-bit digital shift register with a propagation delay of 38ns and operates at a supply voltage of 5V. It is ideal for military applications due to its MIL-PRF-38535 screening level, positive edge trigger type, and CMOS technology.

Median Price

$13.212

Lifecycle Status

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Freelance Electronics

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Forefront Electronics and Design

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Speed Components Ltd

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Manoshevitz Elec. Sales

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ComSIT Distribution GmbH

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Contempo Components LLC

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PC Components Company LLC

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Elcom Components

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ECAB

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AZTECH Wire

Italy . 279 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 3,988 parts In-Stock

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IDEA Electronic Components Group

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Overview

Enhance your digital circuits with the top-quality SNJ54HC165J Digital Shift Register from Texas Instruments. Designed with precision and reliability in mind, this product is perfect for applications in military-grade electronics, communication systems, and industrial automation. Experience seamless data transfer and exceptional performance with a propagation delay of just 38 ns. With a nominal supply voltage of 5V and a maximum frequency of 21 MHz, this shift register offers unparalleled value and efficiency for all your electronic projects. Elevate your designs with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ensures durability and protection for the internal components, making the shift register suitable for rugged environments.

Propagation Delay At Nominal Supply: 38 ns

Fast propagation delay results in quick data transfer, suitable for high-speed applications.

No. of Bits: 8

Provides enough storage capacity for data manipulation and processing.

Nominal Supply Voltage: 5V

Standard voltage level compatible with many electronic systems, simplifying integration.

Temperature Grade: MILITARY

Designed to withstand harsh environmental conditions, making it suitable for military applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring efficient operation.

Maximum Frequency At Nominal Supply: 21,000,000 Hz

High operating frequency allows for fast data processing and real-time applications.

Technical Specifications

Digital Shift Registers SNJ54HC165J attributes and parameters. Explore more Digital Shift Registers devices from Texas Instruments

Specs

Additional Features:

SISO OPERATION ALSO AVAILABLE

Count Direction:

RIGHT

Family:

HC/UH

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum Frequency At Nominal Supply:

21000000 Hz

Maximum I (ol):

5.2 Amp

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

38 ns

Propagation Delay (tpd):

225 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Type:

POSITIVE EDGE

Width:

7.62 mm

Minimum fmax:

25 MHz

Trade Compliance

SNJ54HC165J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-318-1793, 5962013181793, 5962-01-240-9242, 5962012409242

NIIN

013181793, 012409242

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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