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SN75FC1000PHD

Texas Instruments

SN75FC1000PHD by Texas Instruments

SN75FC1000PHD by Texas Instruments is a Telecom Interface IC with 64 terminals, operating at 3.3V. It features BICMOS technology, GULL WING terminal form, and 0.25mA max supply current. Ideal for telecom circuits, it has a temp range of 0-70°C and comes in a square-shaped package measuring 14x14mm.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,696 parts In-Stock

1+ parts

-

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8,696

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Digiode

USA . 4,020 parts In-Stock

1+ parts

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4,020

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 394 parts In-Stock

1+ parts

$8.046

100+ parts

-

1k+ parts

$8.629

10k+ parts

-

394

$8.046

-

$8.629

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DigiPath Technology Company

USA . 1,833 parts In-Stock

1+ parts

$8.860

100+ parts

$8.151

1k+ parts

-

10k+ parts

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1,833

$8.860

$8.151

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IDEA Electronic Components Group

UK . 2,268 parts In-Stock

1+ parts

$9.041

100+ parts

$8.589

1k+ parts

$8.137

10k+ parts

-

2,268

$9.041

$8.589

$8.137

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ChromeModa Solutions

Germany . 1,158 parts In-Stock

1+ parts

$9.041

100+ parts

$7.414

1k+ parts

-

10k+ parts

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1,158

$9.041

$7.414

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AZTECH Wire

Italy . 889 parts In-Stock

1+ parts

$16.207

100+ parts

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889

$16.207

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One Stop Electronics

USA . 906 parts In-Stock

1+ parts

$883.000

100+ parts

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906

$883.000

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Corphita

USA . 3,694 parts In-Stock

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3,694

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Overview

Elevate your communication capabilities with the cutting-edge SN75FC1000PHD by Texas Instruments. Crafted with precision and expertise, this Telecom Interface IC offers unparalleled quality and reliability. Ideal for a wide range of applications in the telecommunications industry, this product boasts a compact design and low power consumption, ensuring seamless integration and optimal performance. Experience the value and benefits of Texas Instruments' superior technology with the SN75FC1000PHD - unlock new possibilities in your communication systems today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the IC, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and reliable installation on circuit boards, saving time and effort during assembly.

Power Supplies (V): 3.3

Operates at a commonly used voltage, making it compatible with a wide range of electronic devices.

No. of Terminals: 64

Offers a high number of connection points, allowing for complex circuit configurations and functionalities.

Maximum Operating Temperature: 70 °C

Can withstand higher temperatures, providing reliability in various operating environments.

Minimum Operating Temperature: 0 °C

Capable of functioning in low temperature conditions, ensuring versatility in different applications.

Technology: BICMOS

Utilizes a combination of bipolar and CMOS technologies, offering a balance between speed and power consumption.

Nominal Supply Voltage: 3.3 V

Operates at a standard voltage level, making it compatible with a wide range of power sources.

Technical Specifications

Other Function Telecom Interface ICs SN75FC1000PHD attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQFP-G64

Length:

14 mm

No. of Functions:

1

No. of Terminals:

64

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TQFP64,.63SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.25 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

BICMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Trade Compliance

SN75FC1000PHD Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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