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SN74LVC157ADBRG4

Texas Instruments

SN74LVC157ADBRG4 by Texas Instruments

SN74LVC157ADBRG4 by Texas Instruments is a CMOS multiplexer with 4 functions and 2 inputs. It operates at a nominal voltage of 1.8V, with a propagation delay of 6.4ns. This industrial-grade device is ideal for applications requiring fast signal switching in compact electronic systems.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 2,311 parts In-Stock

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Digiode

USA . 702 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 401 parts In-Stock

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$6.216

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One Stop Electronics

USA . 530 parts In-Stock

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Parana Technologies

USA . 1,404 parts In-Stock

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DigiPath Technology Company

USA . 1,625 parts In-Stock

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ChromeModa Solutions

Germany . 5,312 parts In-Stock

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IDEA Electronic Components Group

UK . 2,293 parts In-Stock

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Ampacity Inc.

Singapore . 271 parts In-Stock

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Continental Prestige Electronics

USA . 5,429 parts In-Stock

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Argo Parts USA

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Corphita

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Overview

Experience top-notch performance and reliability with the Texas Instruments SN74LVC157ADBRG4 multiplexer & demultiplexer. With a reputation for excellence in semiconductor manufacturing, Texas Instruments delivers a product that exceeds expectations in various applications. This versatile device offers customers seamless functionality, precise operation, and efficient power consumption. Enhance your projects with the SN74LVC157ADBRG4 and enjoy the benefits of cutting-edge technology combined with unmatched quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the internal components of the multiplexer/demultiplexer, ensuring a longer lifespan and reliability.

Propagation Delay At Nominal Supply: 6.4 ns

Low propagation delay ensures fast and efficient signal processing, making this multiplexer/demultiplexer suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

No. of Functions: 4

Having 4 functions in a single device offers versatility and flexibility in signal routing and processing.

No. of Inputs: 2

2 input channels provide options for signal sources, allowing for more complex signal manipulation and routing.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption and heat generation, making it energy-efficient.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures compatibility with a wide range of external components, enabling seamless integration into different circuit designs.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and wide supply voltage range, making this multiplexer/demultiplexer reliable and compatible with diverse applications.

Technical Specifications

Multiplexer & Demultiplexer SN74LVC157ADBRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

6.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.4 ns

Propagation Delay (tpd):

14 ns

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.3 mm

Trade Compliance

SN74LVC157ADBRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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