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SN74CBT3257DBQRE4

Texas Instruments

SN74CBT3257DBQRE4 by Texas Instruments

SN74CBT3257DBQRE4 by Texas Instruments is a 4-function multiplexer with 0.25 ns propagation delay, suitable for industrial applications. It operates at a nominal voltage of 5V and has a load capacitance of 50 pF. With a small outline package style, it features dual terminal position and Gull Wing form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 7,392 parts In-Stock

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Vyrian

USA . 3,994 parts In-Stock

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Digiode

USA . 896 parts In-Stock

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AZTECH Wire

Italy . 874 parts In-Stock

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$16.492

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Parana Technologies

USA . 334 parts In-Stock

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$23.091

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$23.732

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334

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IDEA Electronic Components Group

UK . 1,785 parts In-Stock

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$25.945

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$24.648

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$23.350

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1,785

$25.945

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ChromeModa Solutions

Germany . 395 parts In-Stock

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$25.945

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$21.275

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395

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One Stop Electronics

USA . 1,283 parts In-Stock

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$64.000

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Microchip USA

USA . 2,729 parts In-Stock

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Corphita

USA . 1,642 parts In-Stock

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DigiPath Technology Company

USA . 43 parts In-Stock

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$23.392

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Overview

Upgrade your electronic designs with the SN74CBT3257DBQRE4 by Texas Instruments, a high-quality multiplexer & demultiplexer that offers unparalleled performance and reliability. Manufactured by Texas Instruments, a trusted name in the industry, this versatile component is perfect for a wide range of applications. With fast propagation delay, low power consumption, and 3-state output characteristics, this product delivers exceptional value and efficiency to customers. Trust in Texas Instruments to provide top-of-the-line solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 0.25 ns

Low propagation delay ensures fast and efficient signal processing, making it suitable for high-speed applications.

No. of Functions: 4

Allows for multiple functions to be carried out simultaneously, increasing the versatility and usefulness of the product.

Nominal Supply Voltage / Vsup (V): 5

Operates at a commonly used voltage level, making it compatible with a wide range of electrical systems.

Output Characteristics: 3-STATE

3-state outputs provide flexibility in controlling the output signal, allowing for tri-state logic applications.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity, making the product energy efficient and reliable.

Technical Specifications

Multiplexer & Demultiplexer SN74CBT3257DBQRE4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE MUX/DMUX SWITCH

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

4.9 mm

Load Capacitance (CL):

50 pF

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.003 mA

Propagation Delay At Nominal Supply:

.25 ns

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74CBT3257DBQRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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