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SN55501EFD-00

Texas Instruments

SN55501EFD-00 by Texas Instruments

SN55501EFD-00 by Texas Instruments is a BICMOS technology AC plasma display driver with 32 segments. It operates b/w -55 to 125 °C, with a supply voltage range of 10.8V to 13.2V. Ideal for military-grade applications requiring high-speed data input and serial interface in a compact chip carrier package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,903 parts In-Stock

1+ parts

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3,903

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Digiode

USA . 3,459 parts In-Stock

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3,459

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 715 parts In-Stock

1+ parts

$6.382

100+ parts

-

1k+ parts

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715

$6.382

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Parana Technologies

USA . 465 parts In-Stock

1+ parts

$11.602

100+ parts

-

1k+ parts

$11.999

10k+ parts

-

465

$11.602

-

$11.999

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ChromeModa Solutions

Germany . 6,511 parts In-Stock

1+ parts

$13.036

100+ parts

$10.690

1k+ parts

-

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6,511

$13.036

$10.690

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IDEA Electronic Components Group

UK . 832 parts In-Stock

1+ parts

$13.036

100+ parts

$12.384

1k+ parts

$11.732

10k+ parts

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832

$13.036

$12.384

$11.732

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One Stop Electronics

USA . 1,392 parts In-Stock

1+ parts

$26.500

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1,392

$26.500

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DigiPath Technology Company

USA . 2,222 parts In-Stock

1+ parts

-

100+ parts

$11.753

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10k+ parts

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2,222

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$11.753

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Corphita

USA . 767 parts In-Stock

1+ parts

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767

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Overview

Elevate your graphics display experience with the SN55501EFD-00 by Texas Instruments. Crafted with precision and expertise, this AC plasma display driver offers unrivaled quality and reliability. From military-grade technology to a wide operating temperature range, this chip carrier package is designed to exceed expectations. Perfect for applications requiring high performance and durability, this interface IC type ensures seamless data input with its serial mode. Elevate your visuals with Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides durability and heat resistance, ensuring a reliable performance of the graphics display driver.

Data Input Mode: SERIAL

Serial data input mode allows for efficient and precise data transfer, enhancing the overall functionality of the graphics display driver.

Surface Mount: YES

Surface mount capability enables easy and compact installation of the graphics display driver on circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 13.2 V

With a high maximum supply voltage, this graphics display driver can handle varying power requirements and operate effectively within a wide voltage range.

Package Shape: SQUARE

The square package shape allows for efficient utilization of space on the circuit board, optimizing component layout and overall design.

No. of Terminals: 44

Having a sufficient number of terminals ensures connectivity with other components and peripherals, enhancing the versatility of the graphics display driver.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance ensures reliable performance even under harsh environmental conditions, making this graphics display driver suitable for demanding applications.

Technology: BICMOS

BICMOS technology offers the benefits of both bipolar and CMOS technologies, providing a balance of speed, power efficiency, and integration, making this graphics display driver highly efficient.

Technical Specifications

Graphics Display Drivers SN55501EFD-00 attributes and parameters. Explore more Graphics Display Drivers devices from Texas Instruments

Specs

Data Input Mode:

SERIAL

Interface IC Type:

JESD-30 Code:

S-CQCC-N44

Length:

16.51 mm

Multiplexed Display Capability:

NO

No. of Functions:

1

No. of Segments:

32

No. of Terminals:

44

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

10.8 V

Nominal Supply Voltage:

12 V

Maximum Supply Voltage-1:

100 V

Minimum Supply Voltage-1:

0 V

Nominal Supply Voltage-1:

100 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

16.51 mm

Minimum fmax:

8 MHz

Trade Compliance

SN55501EFD-00 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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