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SBP9960MJ

Texas Instruments

SBP9960MJ by Texas Instruments

Texas Instruments SBP9960MJ is a military-grade parallel I/O port with 28 terminals. It operates b/w -55°C to 125°C, utilizing bipolar technology. The ceramic rectangular package with in-line style and dual terminal position makes it ideal for rugged applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,024 parts In-Stock

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8,024

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Digiode

USA . 939 parts In-Stock

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939

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 727 parts In-Stock

1+ parts

$10.191

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727

$10.191

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One Stop Electronics

USA . 1,070 parts In-Stock

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$15.000

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1,070

$15.000

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Parana Technologies

USA . 1,348 parts In-Stock

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$49.336

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1,348

$49.336

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DigiPath Technology Company

USA . 536 parts In-Stock

1+ parts

$54.325

100+ parts

$49.979

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536

$54.325

$49.979

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Corohmni

South Africa . 183 parts In-Stock

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$55.028

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183

$55.028

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ChromeModa Solutions

Germany . 4,607 parts In-Stock

1+ parts

$55.434

100+ parts

$45.456

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4,607

$55.434

$45.456

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IDEA Electronic Components Group

UK . 1,123 parts In-Stock

1+ parts

$55.434

100+ parts

$52.662

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$49.891

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1,123

$55.434

$52.662

$49.891

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Corphita

USA . 3,869 parts In-Stock

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3,869

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Overview

Enhance your electronic designs with the SBP9960MJ from Texas Instruments, a leading manufacturer known for top-quality components. This Parallel I/O Port offers reliability and precision in a MILITARY-grade package, making it perfect for rugged applications. With 28 terminals and a wide operating temperature range, this component ensures seamless performance in any environment. Trust Texas Instruments to deliver unparalleled value and performance, giving you the advantage in your projects. Choose the SBP9960MJ for superior results every time.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers excellent thermal conductivity and is highly resistant to heat, making it ideal for high temperature environments.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices and provides a compact form factor.

No. of Terminals: 28

Ample number of terminals provide flexibility for connecting multiple devices or components, enhancing the versatility of the product.

Package Style (Meter): IN-LINE

In-line package style simplifies board layout and enables easy connection to other components within the system.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and performance even in extreme heat conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments without compromising functionality.

Terminal Position: DUAL

Dual terminal position provides redundancy and improves the overall reliability of connections.

Temperature Grade: MILITARY

Military-grade temperature grade ensures durability and resilience, making the product suitable for harsh environments.

Technology: BIPOLAR

Bipolar technology offers high-speed operation and precise signal processing capabilities, making the product ideal for demanding applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections to the circuit board, reducing the risk of disconnection or signal interference.

Terminal Pitch: 2.54 mm

Standard terminal pitch simplifies the assembly process and allows for compatibility with commonly used components and connectors.

Technical Specifications

Parallel I/O Ports SBP9960MJ attributes and parameters. Explore more Parallel I/O Ports devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T28

No. of Bits:

1

No. of Terminals:

28

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

Parallel IO Port

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SBP9960MJ Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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