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PTLV9152QDGKRQ1

Texas Instruments

PTLV9152QDGKRQ1 by Texas Instruments

PTLV9152QDGKRQ1 by Texas Instruments is an operational amplifier with 2 functions, low-offset, and micropower features. It has a max input offset voltage of 750 uV, nominal voltage of 4 V, and nominal unity gain bandwidth of 4500 kHz. Ideal for automotive applications due to AEC-Q100 screening level and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,320 parts In-Stock

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Vyrian

USA . 3,224 parts In-Stock

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Nova Conductors

Japan . 17 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 734 parts In-Stock

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$0.747

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734

$0.747

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Parana Technologies

USA . 2,191 parts In-Stock

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$1.388

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$2.101

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$1.388

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$2.101

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ChromeModa Solutions

Germany . 2,198 parts In-Stock

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$1.560

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$1.279

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$1.560

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IDEA Electronic Components Group

UK . 1,810 parts In-Stock

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$1.560

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$1.404

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$1.560

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$1.404

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$3.331

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$3.164

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$3.164

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100

$3.331

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$3.164

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Ampacity Inc.

Singapore . 1,343 parts In-Stock

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$5.410

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One Stop Electronics

USA . 1,380 parts In-Stock

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$6.410

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$6.410

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AZTECH Wire

Italy . 511 parts In-Stock

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$6.989

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Semicontronic

India . 375 parts In-Stock

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$8.410

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$8.200

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$8.158

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375

$8.410

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Corphita

USA . 4,034 parts In-Stock

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Argo Parts USA

USA . 1,897 parts In-Stock

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DigiPath Technology Company

USA . 1,816 parts In-Stock

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$1.406

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$1.406

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Continental Prestige Electronics

USA . 620 parts In-Stock

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620

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the PTLV9152QDGKRQ1 Operational Amplifier. This versatile component offers dual functions, low-offset, micropower capabilities, and a wide temperature range ideal for automotive applications. With a compact package style and high performance features like a high common mode reject ratio and frequency compensation, this amplifier delivers exceptional value and precision for your design needs. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and reliable for long-term use.

Maximum Input Offset Voltage: 750 uV

Low input offset voltage ensures accurate and precise signal processing.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 4

Operates on a low supply voltage, suitable for applications where power efficiency is important.

Nominal Common Mode Reject Ratio: 125 dB

Provides a high level of rejection for common-mode noise, ensuring a clean and stable output signal.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for automotive and industrial applications.

Low-Offset: YES

Low offset voltage ensures minimal errors in signal amplification and processing.

Nominal Unity Gain Bandwidth: 4500 kHz

High unity gain bandwidth allows for efficient signal amplification and processing at high frequencies.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing signals with high accuracy and stability.

Technical Specifications

Operational Amplifiers (Op Amps) PTLV9152QDGKRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

125 dB

Minimum Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

750 uV

Minimum Voltage Gain:

158489.3192

Nominal Slew Rate:

21 V/us

Operational Characteristics

Nominal Supply Voltage:

4 V

Maximum Supply Voltage:

20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.37 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.20

Trade Compliance

PTLV9152QDGKRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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