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PTLV9051IDBVR

Texas Instruments

PTLV9051IDBVR by Texas Instruments

PTLV9051IDBVR by Texas Instruments is a CMOS Operational Amplifier with 5 terminals and a supply voltage of 5V. It offers a max input offset voltage of 2000uV, common mode reject ratio of 79dB, and unity gain bandwidth of 5000kHz. Ideal for automotive applications due to its low profile package style and wide operating temperature range from -40°C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,122 parts In-Stock

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Digiode

USA . 1,809 parts In-Stock

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1,809

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Parana Technologies

USA . 1,210 parts In-Stock

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$2.231

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$2.735

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$2.231

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$2.735

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ChromeModa Solutions

Germany . 4,943 parts In-Stock

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$2.507

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$2.056

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IDEA Electronic Components Group

UK . 785 parts In-Stock

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$2.507

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$2.256

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785

$2.507

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$2.891

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$2.747

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$2.747

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40

$2.891

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$2.747

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One Stop Electronics

USA . 877 parts In-Stock

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$4.410

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877

$4.410

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Corohmni

South Africa . 460 parts In-Stock

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$6.093

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Ampacity Inc.

Singapore . 218 parts In-Stock

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$7.410

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Semicontronic

India . 1,037 parts In-Stock

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$8.410

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$8.200

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$8.158

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AZTECH Wire

Italy . 770 parts In-Stock

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$10.776

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Corphita

USA . 3,571 parts In-Stock

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Argo Parts USA

USA . 2,969 parts In-Stock

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DigiPath Technology Company

USA . 1,524 parts In-Stock

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$2.260

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Bastille Electronics

Australia . 100 parts In-Stock

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Continental Prestige Electronics

USA . 27 parts In-Stock

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Overview

Discover the power of precision with the PTLV9051IDBVR by Texas Instruments, a high-quality operational amplifier that promises unmatched performance and reliability. Manufactured by industry leader Texas Instruments, this small outline, low profile amplifier offers a wide range of applications in automotive and industrial settings. With a nominal common mode reject ratio of 79 dB and a unity gain bandwidth of 5000 kHz, this amplifier ensures optimal signal integrity and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Maximum Input Offset Voltage: 2000 uV

Low input offset voltage ensures accurate signal processing.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards.

Nominal Common Mode Reject Ratio: 79 dB

High common mode rejection ratio reduces noise interference in the output signal.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, making it compatible with most systems.

Maximum Supply Voltage Limit: 6 V

Ensures safe operation within specified voltage limits.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environments.

Minimum Operating Temperature: -40 °C

Can withstand extreme low temperatures, suitable for automotive and industrial applications.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth provides fast and accurate signal processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for precise amplification of signals in various applications.

Technical Specifications

Operational Amplifiers (Op Amps) PTLV9051IDBVR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

79 dB

Input Offset Voltage Limit:

2000 uV

Nominal Slew Rate:

15 V/us

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Trade Compliance

PTLV9051IDBVR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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