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PDRV5013ADQLPG

Texas Instruments

PDRV5013ADQLPG by Texas Instruments

PDRV5013ADQLPG by Texas Instruments is a Hall effect magnetic field sensor with 38V supply, 5.4mT hysteresis, and -40 to 125°C operating range. Ideal for applications requiring digital voltage output in environments with magnetic fields ranging from -5mT to 5mT.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,059 parts In-Stock

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Digiode

USA . 1,175 parts In-Stock

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Parana Technologies

USA . 1,546 parts In-Stock

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$1.392

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$2.103

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DigiPath Technology Company

USA . 1,377 parts In-Stock

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$1.533

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ChromeModa Solutions

Germany . 5,132 parts In-Stock

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$1.564

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$1.282

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IDEA Electronic Components Group

UK . 87 parts In-Stock

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$1.564

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$1.408

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One Stop Electronics

USA . 893 parts In-Stock

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$6.750

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AZTECH Wire

Italy . 823 parts In-Stock

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Ampacity Inc.

Singapore . 880 parts In-Stock

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$17.750

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Semicontronic

India . 493 parts In-Stock

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$26.750

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$26.081

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$25.948

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Corphita

USA . 3,692 parts In-Stock

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Corohmni

South Africa . 448 parts In-Stock

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Overview

Unlock the potential of magnetic field sensing with the PDRV5013ADQLPG by Texas Instruments. Crafted with precision and expertise, this sensor offers unrivaled accuracy and reliability for a wide range of applications. From automotive to industrial automation, this sensor provides real-time data to enhance performance and efficiency. Experience the value of superior quality and cutting-edge technology with the PDRV5013ADQLPG - the ultimate solution for all your magnetic field sensing needs.

Feature Benefit Bullets

Maximum Supply Voltage: 38 V

High maximum supply voltage allows for versatile applications and compatibility with a wide range of power sources.

Hysteresis: 5.4 mT

Low hysteresis ensures accurate and stable measurement of magnetic fields, making this sensor reliable in various conditions.

Body Width: 1.52 inch

Compact body width allows for easy installation and integration into different systems or devices.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR, HALL EFFECT

Hall effect sensors are known for their high sensitivity and accuracy in detecting magnetic fields, making this sensor a reliable choice for precise measurements.

Body Height: 5.05 mm

Low body height enables the sensor to be used in applications with limited space, without compromising on performance.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy mounting and placement in various orientations for optimal magnetic field detection.

Minimum Supply Voltage: 2.5 V

Low minimum supply voltage ensures energy efficiency and allows for operation in low power environments.

Output Range: 0-38V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems or controllers.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and integration with digital systems, enhancing overall performance and reliability.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in extreme cold environments, increasing versatility of the sensor.

Maximum Operating Current: 3.5 mA

Low operating current ensures energy efficiency and reduces power consumption, making this sensor suitable for battery-operated devices.

Minimum Range Of Magnetic Field: -5 mT

Wide range of magnetic field detection allows for versatility in detecting both weak and strong magnetic fields accurately.

Maximum Magnetic Field Range: 5 mT

High maximum magnetic field range enables the sensor to accurately detect strong magnetic fields without saturation, ensuring reliable measurements.

Body Length/Diameter: 4 mm

Compact body length/diameter allows for easy installation and integration into different systems or devices.

Termination Type: SOLDER

Solder termination ensures secure and reliable connection, minimizing the risk of signal loss or interference.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation on PCBs or other surfaces, ensuring stability and accuracy in measurements.

Technical Specifications

Magnetic Field Sensors PDRV5013ADQLPG attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

SHORT CIRCUIT PROTECTION

Body Width:

1.52 inch

Body Height:

5.05 mm

Body Length/Diameter:

4 mm

Hysteresis:

5.4 mT

Maximum Magnetic Field Range:

5 mT

Minimum Range Of Magnetic Field:

-5 mT

Mounting Feature:

Maximum Operating Current:

3.5 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

38 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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