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PDRV5013AGQDBZT

Texas Instruments

PDRV5013AGQDBZT by Texas Instruments

PDRV5013AGQDBZT by Texas Instruments is a Hall effect magnetic field sensor with a supply voltage range of 2.5V to 38V and hysteresis of 12 mT. It operates in temperatures from -40°C to 125°C, making it suitable for various applications requiring digital voltage output sensing within a magnetic field range of -9mT to 9mT.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,833 parts In-Stock

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Vyrian

USA . 2,514 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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Parana Technologies

USA . 999 parts In-Stock

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$2.554

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$3.042

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DigiPath Technology Company

USA . 585 parts In-Stock

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$2.813

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585

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ChromeModa Solutions

Germany . 1,289 parts In-Stock

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$2.870

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$2.353

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IDEA Electronic Components Group

UK . 109 parts In-Stock

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$2.870

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$2.583

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AZTECH Wire

Italy . 359 parts In-Stock

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$11.843

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One Stop Electronics

USA . 422 parts In-Stock

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$31.750

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Ampacity Inc.

Singapore . 585 parts In-Stock

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$52.750

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Corphita

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Aranea Global

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Overview

Unlock the power of magnetic field sensing with the PDRV5013AGQDBZT by Texas Instruments. Crafted by a trusted manufacturer, this sensor offers precision and reliability in measuring magnetic fields. Ideal for a wide range of applications, from automotive to industrial, this sensor provides valuable data to improve efficiency and accuracy. Experience seamless integration and high performance with the PDRV5013AGQDBZT, setting a new standard in magnetic field sensing technology.

Feature Benefit Bullets

Maximum Supply Voltage: 38V

Higher supply voltage allows for more flexibility and compatibility with different systems.

Hysteresis: 12mT

Low hysteresis ensures accurate and precise sensing of magnetic fields.

Body Width: 1.3 inch

Compact size makes it easy to integrate into various applications without taking up too much space.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR, HALL EFFECT

Hall effect sensors are known for their reliability and accuracy in detecting magnetic fields.

Body Height: 1.005 mm

Slim design allows for easy placement in tight spaces or on small boards.

Package Shape or Style: RECTANGULAR

Rectangular shape provides stability and ease of mounting.

Minimum Supply Voltage: 2.5V

Low minimum supply voltage helps in conserving power and energy efficiency.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in various environments.

Output Range: 0-38V

Wide output range allows for detection of a broad range of magnetic field strengths.

Output Type: DIGITAL VOLTAGE

Digital output simplifies interface with microcontrollers and digital systems.

Minimum Operating Temperature: -40 °C

Low operating temperature range enables use in extreme cold conditions.

Maximum Operating Current: 3.5 mA

Low operating current consumption for energy-efficient operation.

Housing: PLASTIC

Plastic housing provides durability and insulation.

Minimum Range Of Magnetic Field: -9 mT

Wide range of magnetic field detection allows for versatile applications.

Maximum Magnetic Field Range: 9 mT

Wide range of magnetic field detection allows for versatile applications.

Body Length/Diameter: 2.92 mm

Small size enables easy integration into compact designs.

Termination Type: SOLDER

Solder termination provides secure and reliable connections.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies PCB assembly and integration.

Technical Specifications

Magnetic Field Sensors PDRV5013AGQDBZT attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

SHORT CIRCUIT PROTECTION

Body Width:

1.3 inch

Body Height:

1.005 mm

Body Length/Diameter:

2.92 mm

Housing:

PLASTIC

Hysteresis:

12 mT

Maximum Magnetic Field Range:

9 mT

Minimum Range Of Magnetic Field:

-9 mT

Mounting Feature:

Maximum Operating Current:

3.5 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

38 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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