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OPA727AIDRBTG4

Texas Instruments

OPA727AIDRBTG4 by Texas Instruments

OPA727AIDRBTG4 by Texas Instruments is an Operational Amplifier with low-offset and low-bias features. It has a max input offset voltage of 150uV, nominal common mode reject ratio of 100dB, and a nominal unity gain bandwidth of 20MHz. Ideal for military applications due to its temperature grade and compact package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,780 parts In-Stock

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7,780

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Digiode

USA . 4,430 parts In-Stock

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4,430

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One Stop Electronics

USA . 1,297 parts In-Stock

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$5.410

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$5.410

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Parana Technologies

USA . 788 parts In-Stock

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$5.469

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$6.194

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788

$5.469

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$6.194

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ChromeModa Solutions

Germany . 3,096 parts In-Stock

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$6.145

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$5.039

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3,096

$6.145

$5.039

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IDEA Electronic Components Group

UK . 2,259 parts In-Stock

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$6.145

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$5.530

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AZTECH Wire

Italy . 304 parts In-Stock

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$19.602

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304

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Component Stockers USA

USA . 254 parts In-Stock

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$99.990

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254

$99.990

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Corphita

USA . 2,394 parts In-Stock

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Microchip USA

USA . 1,415 parts In-Stock

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Perfect Parts

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DigiPath Technology Company

USA . 246 parts In-Stock

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$5.540

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Overview

Experience exceptional performance with the OPA727AIDRBTG4 operational amplifier by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable and versatile components that excel in a wide range of applications. Whether you're working on precision instrumentation, sensor amplification, or audio processing, this Op Amp offers unparalleled value with its low-offset, low-bias characteristics, ensuring optimal signal integrity. Trust Texas Instruments to provide you with the best tools for your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 150 uV

Low input offset voltage ensures accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 0.0005 uA

Low bias current helps in reducing power consumption and maintaining signal integrity.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic designs.

Power Supplies (V): +-2/+-6/4/12

Wide range of power supply options for versatile application scenarios.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio ensures effective noise rejection for clean signal output.

Nominal Supply Voltage / Vsup (V): 5

Optimal supply voltage for stable and efficient operation of the operational amplifier.

No. of Terminals: 8

Sufficient terminals for connecting external components and interfacing with other circuitry.

Maximum Input Offset Current (IIO): 0.0001 uA

Low input offset current contributes to improved precision and accuracy in signal processing.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Compact package style with heat sink for efficient heat dissipation in confined spaces.

Maximum Supply Voltage Limit: 6.6 V

Protection against overvoltage situations to prevent damage to the operational amplifier.

Maximum Operating Temperature: 125 °C

Wide operating temperature range suitable for various environmental conditions.

Frequency Compensation: YES

Integrated frequency compensation for stability and consistent performance over a range of frequencies.

Minimum Voltage Gain: 63100

High minimum voltage gain ensures amplification of weak signals with high fidelity.

Minimum Operating Temperature: -55 °C

Operational at low temperatures, making it suitable for challenging environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

High-quality terminal finish for reliable connections and corrosion resistance.

Terminal Position: DUAL

Dual terminal position for flexibility in circuit layout and connection arrangements.

Low-Offset: YES

Low offset specifications for accurate signal processing and reduced errors.

Maximum Seated Height: 1 mm

Low-profile design for space-efficient installations and compact electronic devices.

Width: 3 mm

Compact width for fitting into tight spaces and densely populated circuit boards.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable soldering and assembly during manufacturing processes.

Length: 3 mm

Short length for space-saving integration in small electronic devices and applications.

Temperature Grade: MILITARY

Military-grade temperature specifications for rugged and dependable performance in demanding environments.

Low-Bias: YES

Low bias current reduces power consumption and maintains signal integrity in power-sensitive applications.

Maximum Negative Supply Voltage Limit: -6.6 V

Protection against overvoltage situations on the negative supply rail for safe operation.

Nominal Unity Gain Bandwidth: 20000 kHz

High unity gain bandwidth for fast and efficient signal amplification and processing.

Minimum Common Mode Reject Ratio: 86 dB

Good common mode rejection ratio for effective noise suppression and clean signal output.

Technology: CMOS

Advanced CMOS technology for low power consumption, high speed, and reliable operation.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally friendly and RoHS-compliant electronic designs.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for various amplifier applications, ensuring optimal performance and functionality.

Maximum Supply Current: 6.5 mA

Moderate supply current for power-efficient operation and prolonged battery life in portable devices.

Nominal Negative Supply Voltage (Vsup): -5 V

Stable negative supply voltage for proper functionality and performance of the operational amplifier.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture for accurate and stable voltage amplification and signal processing.

Packing Method: TR

TR packing method for easy handling, transportation, and storage of multiple operational amplifiers.

Nominal Slow Rate: 30 V/us

Sufficiently slow rate for gradual signal amplification and smooth operation in various applications.

Terminal Pitch: 0.65 mm

Narrow terminal pitch for compact layout and high-density mounting in space-constrained designs.

Moisture Sensitivity Level (MSL): 2

Low moisture sensitivity level for reliable performance in humid or damp environments.

Technical Specifications

Operational Amplifiers (Op Amps) OPA727AIDRBTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2/±6/4/12 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

20 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

86 dB

Input Offset Voltage Limit:

150 uV

Minimum Voltage Gain:

63100

Nominal Slew Rate:

30 V/us

Maximum Input Offset Current (IIO):

100 pA

Peak Bias Current:

500 pA

Maximum Bias Current (IIB) @25 °C:

500 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.6 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

6.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

SOLCC8,.12,25

Trade Compliance

OPA727AIDRBTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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