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OPA704PAG4

Texas Instruments

OPA704PAG4 by Texas Instruments

OPA704PAG4 by Texas Instruments is an Operational Amplifier with low-offset and micropower features. It operates at a max temperature of 85°C, with a unity gain bandwidth of 3000 kHz. Ideal for industrial applications requiring high precision and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,761 parts In-Stock

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5,761

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Digiode

USA . 4,708 parts In-Stock

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4,708

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Distributors (Availability)

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Parana Technologies

USA . 1,180 parts In-Stock

1+ parts

$4.343

100+ parts

-

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$4.762

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1,180

$4.343

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$4.762

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ChromeModa Solutions

Germany . 4,541 parts In-Stock

1+ parts

$4.880

100+ parts

$4.002

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4,541

$4.880

$4.002

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IDEA Electronic Components Group

UK . 1,115 parts In-Stock

1+ parts

$4.880

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$4.392

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1,115

$4.880

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$4.392

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One Stop Electronics

USA . 1,010 parts In-Stock

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$9.410

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1,010

$9.410

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AZTECH Wire

Italy . 723 parts In-Stock

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$13.493

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723

$13.493

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Perfect Parts

USA . 9,520 parts In-Stock

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9,520

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Corphita

USA . 2,753 parts In-Stock

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DigiPath Technology Company

USA . 877 parts In-Stock

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$4.400

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877

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$4.400

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Overview

Unlock the potential of your circuit designs with the OPA704PAG4 by Texas Instruments. As a leading manufacturer in operational amplifiers, Texas Instruments delivers unmatched quality and reliability. The OPA704PAG4 offers low offset, micropower operation, and minimal bias current, making it ideal for a wide range of applications. Whether you're designing precision instrumentation or sensor interfaces, this op amp provides the performance and efficiency you need. Trust Texas Instruments for cutting-edge technology that enhances your projects and elevates your results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 750 uV

The low input offset voltage ensures accurate and precise output signals.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio ensures suppression of noise and interference in the signal.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a nominal supply voltage of 5V, suitable for many applications.

Frequency Compensation: YES (AVCL>=5)

Frequency compensation ensures stability and prevents oscillations in the amplifier.

Minimum Voltage Gain: 63100

High minimum voltage gain ensures amplification of weak signals without distortion.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, ideal for battery-powered devices.

Low-Bias: YES

Low bias current minimizes input offset errors and improves overall accuracy.

Nominal Unity Gain Bandwidth: 3000 kHz

High unity gain bandwidth allows for wide frequency response and fast signal processing.

Architecture: VOLTAGE-FEEDBACK

Voltage feedback architecture provides stability and precise control over the gain of the amplifier.

Technical Specifications

Operational Amplifiers (Op Amps) OPA704PAG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2/±6/4/12 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

YES (AVCL>=5)

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

750 uV

Minimum Voltage Gain:

63100

Nominal Slew Rate:

3 V/us

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.6 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

300 μA

Physical Characteristics

Length:

0.386 in (9.81 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

OPA704PAG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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