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OPA735AIDG4

Texas Instruments

OPA735AIDG4 by Texas Instruments

OPA735AIDG4 by Texas Instruments is an operational amplifier with low-offset and low-bias features. It has a max input offset voltage of 5 uV, nominal common mode reject ratio of 130 dB, and min voltage gain of 562000. Ideal for industrial applications requiring micropower consumption and precise signal amplification in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,000 parts In-Stock

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8,000

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Digiode

USA . 440 parts In-Stock

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440

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Nova Conductors

Japan . 74 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 135 parts In-Stock

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$0.823

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135

$0.823

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One Stop Electronics

USA . 1,056 parts In-Stock

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$5.410

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1,056

$5.410

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Ampacity Inc.

Singapore . 776 parts In-Stock

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$5.410

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776

$5.410

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Parana Technologies

USA . 1,591 parts In-Stock

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$5.646

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$524.332

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$5.082

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1,591

$5.646

$524.332

$5.082

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DigiPath Technology Company

USA . 1,537 parts In-Stock

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$6.217

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1,537

$6.217

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ChromeModa Solutions

Germany . 1,895 parts In-Stock

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$6.344

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$5.202

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$6.344

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IDEA Electronic Components Group

UK . 1,147 parts In-Stock

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$6.344

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$5.710

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$6.344

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AZTECH Wire

Italy . 824 parts In-Stock

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$16.538

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Continental Prestige Electronics

USA . 6,878 parts In-Stock

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Argo Parts USA

USA . 2,253 parts In-Stock

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Corphita

USA . 795 parts In-Stock

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795

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Elevate your electronic designs with the OPA735AIDG4 from Texas Instruments, a leading manufacturer in operational amplifiers. This cutting-edge component offers unparalleled precision and low-offset for optimal performance in a variety of applications. With micropower technology and a wide temperature range, this Op Amp delivers exceptional quality and reliability. Transform your projects with the OPA735AIDG4 and experience seamless operation and superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the op amp.

Maximum Input Offset Voltage: 5 uV

Ensures high precision and accuracy in signal processing applications.

Nominal Common Mode Reject Ratio: 130 dB

Offers excellent rejection of common-mode signals for cleaner output signals.

Maximum Supply Voltage Limit: 6.6 V

Ensures the op amp operates within safe voltage limits, preventing damage.

Minimum Voltage Gain: 562000

Provides high gain amplification for weak input signals.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with a wide temperature range.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for amplifying and processing signals accurately and efficiently.

Technical Specifications

Operational Amplifiers (Op Amps) OPA735AIDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±6/2.7/12 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.6 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Input Offset Voltage Limit:

5 uV

Minimum Voltage Gain:

562000

Nominal Slew Rate:

1.5 V/us

Peak Bias Current:

200 pA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.6 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

750 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

OPA735AIDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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