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MSP430F5247IZQE

Texas Instruments

MSP430F5247IZQE by Texas Instruments

MSP430F5247IZQE by Texas Instruments is a 16-bit microcontroller with 80 terminals, operating at -40 to 85 °C. It features 10-Ch 10-Bit ADC, 3 DMA channels, and low power mode. Ideal for industrial applications requiring high-speed connectivity and flash ROM programmability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,053 parts In-Stock

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Digiode

USA . 1,115 parts In-Stock

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One Stop Electronics

USA . 1,451 parts In-Stock

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$7.000

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$7.000

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AZTECH Wire

Italy . 487 parts In-Stock

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$10.452

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487

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Parana Technologies

USA . 435 parts In-Stock

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$21.591

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$21.988

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435

$21.591

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$21.988

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ChromeModa Solutions

Germany . 2,853 parts In-Stock

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$24.259

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$19.892

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2,853

$24.259

$19.892

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IDEA Electronic Components Group

UK . 1,481 parts In-Stock

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$24.259

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$23.046

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$21.833

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$24.259

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$21.833

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Corphita

USA . 2,821 parts In-Stock

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DigiPath Technology Company

USA . 1,596 parts In-Stock

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$21.872

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Microchip USA

USA . 360 parts In-Stock

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Overview

Elevate your projects with the MSP430F5247IZQE microcontroller by Texas Instruments, a top-tier manufacturer known for its cutting-edge technology and reliable products. Ideal for a wide range of applications in the industrial sector, this microcontroller offers exceptional value with its low power mode, 16 external interrupts, 10-channel ADC, and 3 DMA channels. Unlock endless possibilities with this powerful device, designed to streamline your development process and deliver superior performance. Choose quality, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for various environments.

Maximum Supply Voltage: 3.6 V

Allows for flexibility in power supply options while ensuring safe operation within the specified voltage range.

Bit Size: 16

Offers a good balance between processing power and memory efficiency for a wide range of applications.

ADC Channels: YES

Enables analog-to-digital conversion, expanding the range of input signals that the microcontroller can process.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes a RISC architecture, which is known for its efficiency and performance in embedded systems.

Technology: CMOS

Uses CMOS technology for low power consumption and high noise immunity, making it suitable for battery-powered devices.

ROM Programmability: FLASH

Allows for easy and flexible reprogramming of the on-chip memory, improving the versatility of the microcontroller.

No. of I/O Lines: 53

Provides ample input and output options for interfacing with external components, enhancing the microcontroller's connectivity and functionality.

Technical Specifications

Microcontrollers MSP430F5247IZQE attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Bit Size:

16

Boundary Scan:

YES

CPU Family:

MSP430

DAC Channels:

NO

DMA Channels:

YES

Integrated Cache:

NO

JESD-30 Code:

S-PBGA-B80

JESD-609 Code:

e1

Length:

5 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

3

No. of External Interrupts:

16

No. of I/O Lines:

53

No. of Terminals:

80

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA80,9X9,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Maximum Supply Current:

11 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C(2), IRDA(2), SPI(4), UART(2)

Peripherals:

COMPARATOR(8), DMA(3), PWM, RTC, TIMER(4), WDT

Analog To Digital Convertors:

10-Ch 10-Bit

Trade Compliance

MSP430F5247IZQE Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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