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LPV358IDDURE4

Texas Instruments

LPV358IDDURE4 by Texas Instruments

LPV358IDDURE4 by Texas Instruments is a dual operational amplifier with a max input offset voltage of 11000 uV and a nominal voltage of 5 V. With micropower technology, it operates in automotive-grade temperatures from -40 to 125 °C, making it ideal for precision signal conditioning applications in harsh environments. The package style is small outline with very thin profile, suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,523 parts In-Stock

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Digiode

USA . 2,686 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,807 parts In-Stock

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$2.011

100+ parts

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$2.537

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1,807

$2.011

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$2.537

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ChromeModa Solutions

Germany . 5,900 parts In-Stock

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$2.260

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$1.853

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$2.260

$1.853

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IDEA Electronic Components Group

UK . 25 parts In-Stock

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$2.260

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$2.034

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One Stop Electronics

USA . 148 parts In-Stock

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$4.410

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AZTECH Wire

Italy . 283 parts In-Stock

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$7.538

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Component Stockers USA

USA . 593 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 7,027 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,351 parts In-Stock

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Corphita

USA . 3,323 parts In-Stock

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DigiPath Technology Company

USA . 569 parts In-Stock

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Microchip USA

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Overview

Experience exceptional performance with the LPV358IDDURE4 operational amplifier by Texas Instruments. Crafted with precision and expertise, this op amp offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides outstanding value to our customers. With its advanced features and innovative design, the LPV358IDDURE4 ensures optimal performance and efficiency, making it the perfect choice for your next project. Elevate your designs with the LPV358IDDURE4 and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage helps in minimizing errors in the amplification process, leading to accurate output signal.

Surface Mount: YES

Surface mount technology makes it easier to integrate the operational amplifier into compact electronic devices, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this operational amplifier compatible with a wide range of applications, ensuring versatility.

Frequency Compensation: YES

Frequency compensation feature helps in stabilizing the operational amplifier's performance over a range of frequencies, ensuring reliable operation.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture offers excellent linearity and stability, making this operational amplifier suitable for precision applications that require accurate signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LPV358IDDURE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

65 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

80 μA

Physical Characteristics

Length:

0.091 in (2.3 mm)

Width:

0.079 in (2 mm)

Maximum Seated Height:

0.035 in (0.9 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Very Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.12,20

Trade Compliance

LPV358IDDURE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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